YAMADA Takeshi | NTT Opto-electronics Laboratories
スポンサーリンク
概要
関連著者
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YAMADA Takeshi
NTT Opto-electronics Laboratories
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Yamada T
Tokai Univ. Hiratsuka Jpn
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IGA Ryuzo
NTT Opto-electronics Laboratories
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SUGIURA Hideo
NTT Opto-electronics Laboratories
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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Sugiura H
Ntt Opti‐electronics Lab. Kanagawa‐ken Jpn
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NOGUCHI Yoshio
NTT Opto-electronics Laboratories
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Nakano Yoshinori
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Cororation
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Noguchi Y
Tohoku Univ. Sendai Jpn
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YASAKA Hiroshi
NTT Opto-electronics Laboratories
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Yasaka Hiroshi
Ntt Opto-electornics Laboratories
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KADOTA Yoshiaki
NTT Opto-electronics Laboratories
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NAKAO Masashi
NTT Opto-electronics Laboratories
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Yamada T
Ntt Basic Research Laboratories:(present Address) Ntt Opto-electronics Laboratories
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Yamada Tomoyuki
Research Laboratory Oki Electric Industry Co. Ltd.
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Tachikawa Masami
Ntt Opto-electronics Laboratories
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Mori Hidefumi
NTT Opto-electronics Laboratories
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SASAKI Tohru
NTT Opto-electronics Laboratories
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Toriyama Tsuyoshi
NTT Applied Electrons Laboratories
著作論文
- Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP
- High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
- Mechanism of GaAs Selective Growth in Ar^+ Laser-Assited Metalorganic Molecular Beam Epitaxy
- Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium