Tachikawa Masami | Ntt Opto-electronics Laboratories

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概要

• Tachikawa Masamiの詳細を見る
• 同名の論文著者
• Ntt Opto-electronics Laboratoriesの論文著者

関連著者

• Tachikawa Masami

  Ntt Opto-electronics Laboratories

• Mori Hidefumi

  NTT Opto-electronics Laboratories

• TACHIKAWA Maki

  Department of Physics, Faculty of Science, The University of Tokyo

• Tachikawa M

  Meiji Univ. Kawasaki Jpn

• Tachikawa Maki

  Department Of Physics The University Of Tokyo

• Mori H

  Osaka Univ. Osaka Jpn

• ITOH Yoshio

  NTT Opto-electronics Laboratories

• MAKITA Hiroshi

  Kochi University of Technology

• SUGO Mitsuru

  NTT Opto-electronics Laboratories

• Mori H

  Research Center For Ultra-high Voltage Electron Microscopy Osaka University

• Itoh Y

  Imra Material R&d Co. Ltd.

• Sugo Mitsuru

  Research Institute Of Applied Electricity Hokkaido University:nippon Telegraph And Telephone Public

• Tachikawa Maki

  Department Of Physics Faculty Of Science The University Of Tokyo

• NISHINAGA Tatau

  Department of Electronic Engineering, Faculty of Engineering, University of Tokyo

• KADOTA Yoshiaki

  NTT Opto-electronics Laboratories

• SAKAI Yoshihisa

  NTT Opto-electronics Laboratories

• Nishinaga Tatau

  Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo

• YAMADA Takeshi

  NTT Opto-electronics Laboratories

• SASAKI Tohru

  NTT Opto-electronics Laboratories

• NARITSUKA Shigeya

  Department of Electrical Engineering, Faculty of Engineering, The University of Tokyo

• MORI Hidehumi

  NTT Opto-electronics Laboratories

• Naritsuka Shigeya

  Department Of Electrical Engineering Faculty Of Engineering The University Of Tokyo

• Nishinaga Tatau

  Department Of Electrical Engineering Faculty Of Engineering The University Of Tokyo

• Nishinaga Tatau

  Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University

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著作論文

• Dislocation Generation of III-V Semiconductors by the Biaxial Stress in GaAs/SiO_2, InP /SiO_2 and III-V/Si Structure
• Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy
• InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
• Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
• 1.5 μm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate

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