Dislocation Generation of III-V Semiconductors by the Biaxial Stress in GaAs/SiO_2, InP /SiO_2 and III-V/Si Structure

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-04-01

著者

• Tachikawa Masami

  Ntt Opto-electronics Laboratories

• Mori Hidefumi

  NTT Opto-electronics Laboratories

関連論文

• Dislocation Generation of III-V Semiconductors by the Biaxial Stress in GaAs/SiO_2, InP /SiO_2 and III-V/Si Structure
• Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy
• InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
• Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
• 1.5 μm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate

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