Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy

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Dislocation Generation of III-V Semiconductors by the Biaxial Stress in GaAs/SiO_2, InP /SiO_2 and III-V/Si Structure
Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy
InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP
High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
Mechanism of GaAs Selective Growth in Ar^+ Laser-Assited Metalorganic Molecular Beam Epitaxy
Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
1.5 μm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate
Single Transverse Mode Microcavity Laser with Ultralow Threshold
Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium
Novel Selective Growth Using a Native Oxide on a (110) Cleaved Plane of AlGaAs/GaAs Superlattice

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