Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-01
著者
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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Yamada T
Tokai Univ. Hiratsuka Jpn
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YAMADA Takeshi
NTT Opto-electronics Laboratories
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IGA Ryuzo
NTT Opto-electronics Laboratories
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SUGIURA Hideo
NTT Opto-electronics Laboratories
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Sugiura H
Ntt Opti‐electronics Lab. Kanagawa‐ken Jpn
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- Observation of Transient Behavior of GaAs MBE Growth by RHEED Oscillation
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- Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam
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