Preparation and Superconducting Properties of La_<2-x>(Ca_<1-y>Sr_y)_<1+x>Cu_2O_<6-x/2+δ>

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-09-20

著者

• Yamada Tomoaki

  Ntt Basic Research Laboratories

• Yamada T

  Tokyo Inst. Technol. Tokyo Jpn

• KINOSHITA Kyoichi

  NTT Basic Research Laboratory

• Shibata H

  Toshiba Corp. Yokohama Jpn

• Yamada T

  Sophia Univ. Tokyo Jpn

• Tajima Y

  Sharp Corp. Nara

• SHIBATA Hiroyuki

  NTT Basic Research Laboraiories

• Tajima Y

  Ntt Applied Electronics Laboratories

• Kinoshita Kyoichi

  Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency

• Kinoshita K

  Ntt Basic Research Laboratories

• Kinoshita K

  Physical Science Laboratory Ntt Basic Research Laboratories

• Kinoshita Kyoichi

  Ntt Basic Research Laboratories

• Shibata H

  Electrotechnical Lab. Ibaraki Jpn

• Shibata Hiroyuki

  Ntt Basic Research Laboratories

関連論文

• Two-Dimensional Weak Localization in Electron High-T_c Superconductor Nd(2-x) Ce_xCuO_y under High Magnetic Field
• Magnetoresistance Measurements of Single-Crystal LnBa_2Cu_3O_y (Ln=Ho,Dy,Eu and Y) under Pulsed High Magnetic Field
• InAs-GaAs Interdiffusion Measurements (TR-IA 7号機特集)
• Magnetic and Superconducting Properties of Ba_2HoCu_3O_ under High Magnetic Field : Electrical Properties of Condensed Matter
• Visible Fluctuation Measurements on the TST-2 Spherical Tokamak
• Two-Chord Interferotnetry Using a Pin Switch for Plasma Density Measurement : Nuclear Sciences, Plasmas, and Electric Discharges
• Investigations of Local Surface Properties by SNOM Combined with KFM Using a PZT Cantilever(Special Issue on Near-Field Optics and Its Applications)
• Fabrication of Nanometer-Scale Pattern Using Current-Controlled Scanning Probe Lithography
• Experimental Study on Energy Dissipation Induced by Displacement Current in Non-contact Aomic Force Microscopy Imaging of Molecular Thin Films
• Nanometer-Scale Characterization of Ferroelectric Polymer Thin Films by Variable-Temperature Atomic Force Microscopy
• Structures and Electrical Properties of Fullerene Thin Films on Si(111)-7×7 Surface Investigated by Noncontact Atomic Force Microscopy
• Dynamic Force Microscopy Investigations of C_ Deposited on Si(111) Surface
• The Molecular Arrangements of Alkanethiol Self-Assembled Monolayers on Au(111) Studied by Scanning Tunneling Microscopy
• Structural Study on Self-Assembled Monolayers of Alkanedithiol Molecules
• Deposition of Ge_C_x Alloy on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxial Method
• Translational Phase Domains in the Cation Sublattice of Chalcopyrite Compounds
• Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
• Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
• Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
• Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
• Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
• Crystal Structure and Superconductivity in Ba_2Y_Pr_xCu_3O_ : Electrical Properties of Condensed Matter
• Superconductivity in Ba_3La_2LuCu_6O_y : Electrical Properties of Condensed Matter
• Preparation and Superconducting Properties of Tetragonal Ba_2YCu_3O_ and Ba_2EuCu_3O_ with Low Oxygen-Defect Concentration (0.05
• Superconductivity in Ba-Ln(lanthanoid)-Cu-O Compounds
• Estimation of Diffusion Coefficient by Using Numerical Simulation of the Traveling Liquidus-zone MethodDetailed Results of This Period : Growth of Homogeneous Si_Ge_ Single Crystals by the Traveling Liquidus-Zone Method (Effects of microgravity
• Numerical Investigation on Two-dimensionality in the Traveling Liquidus-zone MethodDetailed Results of This Period : Growth of Homogeneous Si_Ge_ Single Crystals by the Traveling Liquidus-Zone Method (Effects of microgravity environment on growt
• In_Ga_As Plate Crystals Grown by the Traveling Liquidus-Zone (TLZ) MethodDetailed Results of This Period : Growth of Homogeneous Si_Ge_ Single Crystals by the Traveling Liquidus-Zone Method (Effects of microgravity environment on growt
• The Damage Energy Transfer to Interfacial Oxide by Phosphorus Ion Implantation for Small Geometry Polysilicon to Polysilicon Contact
• High-Pressure Transport Properties of the Superconducting Spin-Ladder System Sr_Ca_xCu_O_
• Superconductivity in the Ladder Material Sr_Ca_Cu_O_
• Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
• Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
• GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
• P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
• GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
• Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
• Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
• Lower Lamb Wave Resonance Mode of Thin Cylindrical Shells
• Effect of Thin Cylindrical Shell Vibration on Resonant Frequency of Cylindrical Resonator-Type Sound Source
• Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
• InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
• Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
• High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
• InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• Local Magnetic Properties of Underdoped La_Sr_χ CuO_4 Single Crystal Probed by Scanning Superconducting Quantum Interference Device Microscopy : Superconductors
• High Quality In_xGa_As (x: 0.1-0.13) Platy Crystal Growth for Semiconductor Laser Substrates
• Detailed Results of This Period : Growth of Homogeneous Si_Ge_ Single Crystals by the Traveling Liquidus-Zone Method (Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs) : Growth of homogeneous cryst
• Electronic Structure in the Bulk State of Protonic Conductor CaZrO_3 by Resonant Soft-X-Ray Emission Spectroscopy : Electrical Properties of Condensed Matter
• Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
• Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
• Impact of Thermal Nitridation on Microscopic Stress-Induced Leakage Current in Sub-10-nm Silicon Dioxides
• Synthesis of Superconducting T'-(La_Ce_x)_2CuO_4
• Preparation and Superconducting Properties of La_(Ca_Sr_y)_Cu_2O_
• Crystal Structure of Low Oxygen-Defect Tetragonal Ba_2YCu_3O_
• Crystal Structure and Superconducting Properties of BaPb_Bi_xCu_yO_
• Simultaneous Stress-Induced Al Extrusion and Void Formation Caused by High Temperature Annealing after Via-Hole Opening in Al Interconnects with Via-Holes
• Scale up of In_xGa_A_s (x: 0.08 - 0.13) Platy Crystals for Semiconductor Laser Substrates
• Cu-NMR Study on Bilayer High-T_c Cuprate La_Ca_Cu_2O_(La2126)
• Photoemission Study on Protonic Conductor CaZrO_3:Evidence of the Exchange Mechanism of Proton and Hole
• Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
• High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
• All-Optical Inverter Operating up to 850℃ in an Erbium-Doped Phosphate Glass
• Temperature Dependence of Negative Nonlinear Absorption Effect in an Erbium-doped Borate Glass
• 50 nm Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF_4 Plasma
• Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
• Sub-100nm Lithography with Using Pulsed Plasma Graft-polymerized Styrene and E-Beam Excited Plasma
• Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
• High-Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO_2 Formed in a SiCl_4-N_2O System
• Measurement of Surface Fermi Level in Phosphidized GaAs
• Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
• Liquid Crystalline Behaviors of Conducting Polyacetylene Derivative with Mesogenic Substituent and Its Mixture with Ferroelectric Liquid Crystal
• Progress in the Efficiency of Wide-Gap Cu(In_Ga_x)Se_2 Solar Cells Using CIGSe Layers Grown in Water Vapor
• Thermal Cracking Effects of CeCl_3 Dopant on Blue Electroluminescent Properties in SrGa_2S_4:Ce Thin Films
• Ce-Activated SrS Thin Film Electroluminescent Devices Fabricated by Multi Source Deposition Using Ga_2S_3 Precursor
• Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP
• High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
• Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
• Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
• In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
• Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
• Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
• Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
• Mechanism of GaAs Selective Growth in Ar^+ Laser-Assited Metalorganic Molecular Beam Epitaxy
• Ion Irradiation Effect on the Microscopic Potential Distribution of MgO Surface
• High-Pressure Synthesis of Superconducting (Ba_Sr_x)_2Cu_O_(CO_3)_(0.35≤x≤0.6, y≈0.1)
• Unusual Voltage-Current Characteristic in the Superconducting Transition Region in TaSe_3
• In-Situ Observation of Melting and Solidification Processes in the Pb-Br_2-PbCl_2 System under Microgravity
• Fault-Tolerant Graphs for Hypercubes and Tori (Special Issue on Architectures, Algorithms and Networks for Massively parallel Computing)
• The Effects of Al(111) Crystal Orientation on Electromigration in Half-Micron Layered Al Interconnects
• A Note on the Circuit-switched Fixed Routing in Networks (特集 並列処理)
• Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium
• Increase of Si
• Superconducting Nanowire Single-Photon Detector with Ultralow Dark Count Rate Using Cold Optical Filters
• Growth of SiGe Crystals by the Traveling Liquidus Zone (TLZ) Method : Preliminary Experiments on the Ground
• Fabrication of MgB_2 Nanowire Single-Photon Detector with Meander Structure

もっと見る 閉じる

スポンサーリンク