Increase of Si
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概要
- 論文の詳細を見る
Compositionally uniform 2 and 10 mm diameter Si<inf>0.5</inf>Ge<inf>0.5</inf>bulk crystals have been grown by the traveling liquidus-zone (TLZ) method. The TLZ method requires diffusion controlled mass transport in a melt and crystal size was limited for suppressing convection in a melt. For substrate use, however, larger diameter crystals are required. Increase of crystal diameter was challenged in spite of the concern that compositional homogeneity of grown crystals might be degraded due to faster convective flow in a larger diameter melt. As a result, however, increase of crystal diameter was possible up to 30 mm although single crystal length was limited to 5 mm. Si<inf>0.55</inf>Ge<inf>0.45</inf>and Si<inf>0.6</inf>Ge<inf>0.4</inf>bulk crystals with 30 mm diameter showed excellent compositional homogeneity and high crystallinity without mosaicity.
- 2013-04-25
著者
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Yoda Shinichi
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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Kinoshita Kyoichi
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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TANAKA Ryota
Advanced Engineering Service Co. Ltd.
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Arai Yasutomo
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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Nakatsuka Osamu
Graduate School of Eng., Nagoya Univ.
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Tanaka Ryota
Advanced Engineering Services Co., Ltd., Tsukuba, Ibaraki 305-0032, Japan
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Tomioka Hiroshi
Advanced Engineering Services Co., Ltd., Tsukuba, Ibaraki 305-0032, Japan
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Taguchi Keisuke
Advanced Engineering Services Co., Ltd., Tsukuba, Ibaraki 305-0032, Japan
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Kinoshita Kyoichi
Institute of Space and Astronautical Science, JAXA, Tsukuba, Ibaraki 305-8505, Japan
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