Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System

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概要

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• The dependence of electrical characteristics on the interfacial structure of epitaxial NiSi2/Si contacts formed from a Ni/Ti/Si system has been investigated. The interfacial structure can be successfully controlled by controlling the annealing conditions of the Ni/Ti/Si system. Annealing a Ni/Ti/Si sample at a temperature as low as 350 °C results in the formation of a large number of NiSi2 domains surrounded by {111} facets, and rapid thermal annealing at a temperature higher than 750 °C leads to an atomically flat NiSi2(001)/Si(001) interface. We also found a strong dependence of the Schottky barrier height on the interfacial structure. A measurable current crowding effect at the contact edge region occurs due to the much lower Schottky barrier height of the (111) facet than the (001) interface in a p-type contact.

• 2008-04-25

著者

• SAKAI Akira

  Graduate School of Engineering, Nagoya University

• Ogawa Masaki

  Ecotopia Science Institute Nagoya University

• Suzuki Atsushi

  Graduate School Of Agricultural Science Tohoku University

• Akimoto Shingo

  Graduate School Of Engineering Nagoya University

• Zaima Shigeaki

  Graduate School Of Eng. Nagoya Univ.

• Nakatsuka Osamu

  Graduate School of Eng., Nagoya Univ.

• Zaima Shigeaki

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Akimoto Shingo

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Sakai Akira

  Graduate School of Engineering Science, Osaka University, 1-3 Machikane-cho, Toyonaka, Osaka 560-8531, Japan

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