Crystalline Structures and Electrical Properties of High-Nitrogen-Content Hf–Si–N Films

スポンサーリンク

概要

• 論文の詳細を見る

• The crystalline structures and electrical properties of high-nitrogen (N)-content Hf–Si–N films were investigated. When the N2 concentration of a sputtering ambient increases from 9.0 to 13.0%, Hf–Si–N resistivity increases by a factor of more than $10^{5}$ despite the almost constant N content of the film. According to X-ray diffraction profiles and X-ray photoelectron spectra, such high-N-content Hf–Si–N films consist of Hf3N4 and Si3N4, and have energy band gaps. These results indicate that Hf3N4 and high-N-content Hf–Si–N including Hf3N4 have semiconducting features. In Pt/Hf–Si–N/Pt structures with high-N-content Hf–Si–N, nonlinear current–voltage characteristics and hysteresis behaviors are also observed, which markedly change depending on N2 concentration and postdeposition annealing temperature. Although the elemental composition and crystalline structure hardly change, the phase separation and segregation of nanocrystallites clearly develop. Therefore, these unique electrical characteristics are attributed to current conduction at grain boundaries or Pt/Hf–Si–N interfaces.

• 2010-04-25

著者

• KONDO Hiroki

  Graduate School of Engineering, Nagoya University

• Zaima Shigeaki

  Graduate School Of Eng. Nagoya Univ.

• Shigeaki Zaima

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Miyamoto Kazuaki

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Kazuaki Miyamoto

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Hiroki Kondo

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

関連論文

• Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• HfO_2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic
• Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System
• Pr-Oxide-Based Dielectric Films on Ge Substrates
• Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy
• Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
• Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
• Film structures and electrical properties of Pr silicate formed by pulsed laser deposition
• Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
• Behaviors of Absolute Densities of N, H, and NH3 at Remote Region of High-Density Radical Source Employing N2--H2 Mixture Plasmas
• Impacts of CF+, CF2+, CF3+, and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist
• Control of interfacial properties of Al2O3/Ge gate stack structure using radical nitridation technique (Special issue: Dielectric thin films for future electron devices: science and technology)
• Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure
• Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
• Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth
• Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf–Si–N Gate Electrodes for Metal–Oxide–Semiconductor Field-Effect Transistors
• Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes
• Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn
• Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas
• Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors
• Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System
• Crystalline Structures and Electrical Properties of High-Nitrogen-Content Hf–Si–N Films
• Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates
• Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction
• A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
• Interfacial Reaction Mechanisms in Al
• Composition Dependence of Work Function in Metal (Ni,Pt)–Germanide Gate Electrodes
• Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers
• High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System
• High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface

もっと見る 閉じる

スポンサーリンク