Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers

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概要

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• We investigated the relationship between Sn precipitation and strain relaxation in Ge1-xSnx buffer layers grown by the compositionally step-graded (CSG) method on a virtual Ge substrate. We found that the strain in the upper Ge1-xSnx layers is reduced by Sn precipitation rather than the lateral propagation of misfit dislocations at the interfaces of upper Ge1-xSnx layers in the CSG method. The critical misfit strain was increased to $5.8 \times 10^{-3}$ compared with that in our previous work by lowering the temperature of the postdeposition annealing, and a Sn content of 6.3% in the Ge1-xSnx buffer layer was achieved with a large degree of strain relaxation using only two stacked layers of the CSG structure. An in-plane tensile strain of 0.62% in a 30-nm-thick Ge layer fabricated on these Ge1-xSnx buffer layers was achieved.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• SAKAI Akira

  Graduate School of Engineering, Nagoya University

• Zaima Shigeaki

  Graduate School Of Eng. Nagoya Univ.

• Shimura Yosuke

  Graduate School Of Engineering Nagoya University

• Nakatsuka Osamu

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Nakatsuka Osamu

  Graduate School of Eng., Nagoya Univ.

• Zaima Shigeaki

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Tsutsui Norimasa

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Shimura Yosuke

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Sakai Akira

  Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

• Sakai Akira

  Graduate School of Engineering Science, Osaka University, 1-3 Machikane-cho, Toyonaka, Osaka 560-8531, Japan

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