Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

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概要

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• The effect of Ag buffer layers epitaxially grown on Si(111) substrates on the growth of carbon nanotubes (CNTs) has been investigated. We have examined the morphology of Co particles deposited on the epitaxial Ag layer and SiO2, and that of CNTs grown on the epitaxial Ag layer and SiO2. In this study, the epitaxial Ag buffer layer was stable during CNT growth. The density of Co particles on the epitaxial Ag layer was higher than that on SiO2 and the mean diameter of Co particles on the epitaxial Ag layer was smaller than that on SiO2. Furthermore, the diameter distribution of Co particles on the epitaxial Ag layer was narrower than that on SiO2. According to these results of diameter distribution of Co, the density of CNTs grown on the epitaxial Ag layer was higher than that on SiO2. From these results, the epitaxial Ag layer is suitable as an electrode of a CNT device.

• 2008-05-25

著者

• SAKAI Akira

  Graduate School of Engineering, Nagoya University

• Ogawa Masaki

  Ecotopia Science Institute Nagoya University

• Zaima Shigeaki

  Graduate School Of Eng. Nagoya Univ.

• Nakatsuka Osamu

  Graduate School of Eng., Nagoya Univ.

• Oida Satoshi

  Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Sakai Akira

  Graduate School of Engineering Science, Osaka University, 1-3 Machikane-cho, Toyonaka, Osaka 560-8531, Japan

関連論文

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• Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy
• Hydrogen Effects on Si_Ge_x/Si Heteroepitaxial Growth by Si_2H_6- and GeH_4-Source Molecular Beam Epitaxy
• Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
• Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
• Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates
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• Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals
• Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
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