Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal--Oxide--Semiconductor Field-Effect Transistor

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概要

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• The electrical characteristics of wafer-bonded non-doped germanium-on-insulator (GOI) substrates were investigated using a four-point-probe pseudo-metal--oxide--semiconductor field-effect transistor. Annealing the wafer-bonded GOI substrates in vacuum strongly influenced their electrical characteristics. GOI samples annealed at temperatures below 500 °C exhibited n-channel depletion transistor operation, whereas GOI samples annealed at temperatures between 550 and 600 °C exhibited p-channel depletion transistor operation. The carrier mobility strongly depended on the sweep direction of the gate voltage; this characteristic disappeared after annealing at temperatures above 550 °C. The dependence of the electrical characteristics on the annealing temperature is explained in terms of the influence of the defect states on energy band bending near the interface.

• 2011-04-25

著者

• Nakamura Yoshiaki

  Graduate School Of Engineering Hokkaido University

• Kikkawa Jun

  Graduate School Of Engineering Science Osaka University

• Izunome Koji

  Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan

• Isogai Hiromichi

  Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan

• Toyoda Eiji

  Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan

• Sakai Akira

  Graduate School of Engineering Science, Osaka University, 1-3 Machikane-cho, Toyonaka, Osaka 560-8531, Japan

• Iwasaki Yuji

  Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Sato Motoki

  Covalent Silicon Co., Ltd., Seiro, Niigata 957-0197, Japan

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