Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates

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概要

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• We have investigated annealing effects on Ge/SiO2 interfaces in wafer-bonded germanium-on-insulator substrates using transmission electron microscopy and electron energy loss spectroscopy. A number of nanometer-sized hollows were observed at the Ge/SiO2 interfaces after annealing at 500 and 600 °C, while the density of these hollows was very small after annealing at 700 and 800 °C. The hollows are attributed to the formation of amorphous oxides of Si-rich Si1-xGexO2. The mechanism for the formation and disappearance of these amorphous hollows on the Ge substrates is discussed.

• 2011-04-25

著者

• SAKAI Akira

  Graduate School of Engineering, Nagoya University

• Nakamura Yoshiaki

  Graduate School Of Engineering Hokkaido University

• Kikkawa Jun

  Graduate School Of Engineering Science Osaka University

• Izunome Koji

  Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan

• Izunome Koji

  Covalent Silicon Co., Ltd., Seiro, Niigata 957-0197, Japan

• Isogai Hiromichi

  Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan

• Isogai Hiromichi

  Covalent Silicon Co., Ltd., Seiro, Niigata 957-0197, Japan

• Yoshitake Osamu

  Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Toyoda Eiji

  Covalent Silicon Co., Ltd., Seiro, Niigata 957-0197, Japan

• Kikkawa Jun

  Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Toyoda Eiji

  Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan

• Sakai Akira

  Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

• Sakai Akira

  Graduate School of Engineering Science, Osaka University, 1-3 Machikane-cho, Toyonaka, Osaka 560-8531, Japan

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