Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
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概要
- 論文の詳細を見る
We have investigated the initial nitridation processes on oxidized Si(100) with radical nitrogen at a substrate temperature of 850°C using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). It is found that the thin oxide layer suppresses the changes of original Si step structures during nitridation, and this effect critically depends on the growth conditions of the oxide layer. Comparison of the nitride island morphology to the case of the clean surface suggests that the migration of the precursor during nitridation is suppressed by the oxygen in the layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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SAKAI Akira
Graduate School of Engineering, Nagoya University
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YASUDA Yukio
Graduate School of Engineering, Nagoya University
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SAKASHITA Mitsuo
Graduate School of Engineering, Nagoya University
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IKEDA Hiroya
Graduate School of Engineering, Nagoya University
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Nakatsuka Osamu
Center For Integrated Research In Science And Engineering Nagoya University
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Takahashi Ryoya
Graduate School Of Engineering Nagoya University
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Zaima Shigeaki
Center For Cooperative Research In Advanced Science & Technology Nagoya University
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Kobayashi Yasushi
Graduate School Of Engineering Nagoya University
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Kobayashi Yasushi
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Nakatsuka Osamu
Center for Integrated Research in Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Sakashita Mitsuo
Graduate School of Eng., Nagoya Univ.
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Sakai Akira
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Takahashi Ryoya
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Sakai Akira
Graduate School of Engineering Science, Osaka University, 1-3 Machikane-cho, Toyonaka, Osaka 560-8531, Japan
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