Characterization of Ion Beam Deposited ^<107>Ag Thin Films on Si(111) Surface by means of Rutherford Backscattering Spectroscopy and Reflection High Energy Electron Diffraction

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概要

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• The crystalline quality of the 107Ag films on Si(111) surface grown by mass-separated low energy ion beam deposition (IBD) has been studied by means of combined techniques of reflection high energy electron diffraction (RHEED), low energy electron diffraction, and Rutherford backscattering spectroscopy (RBS). Although crystalline quality of the films hardly depends on Ag ion energy in the range of 30–100 eV for RHEED patterns, the RBS-channeling spectra clearly show the difference in the minimum channeling yield χmin and the increasing rate of the channeling yield dχ(z)⁄dz. The Ag ion energy to obtain a well-crystallized Ag film is found to be 30–50 eV. In addition, it is shown that excellent quality of the Ag films grown at elevated temperature can be obtained by means of IBD.

• 一般社団法人 日本原子力学会の論文
• 2006-04-25

著者

• KOBAYASHI Yasushi

  Graduate School of Engineering, Nagoya University

• NAGASAKI Takanori

  EcoTopia Science Institute, Nagoya University

• Yuhara Junji

  Graduate School Of Engineering Nagoya University

• Takeuchi Masanori

  Graduate School Of Engineering Nagoya University

• Matsui Tsuneo

  Graduate School Of Engineering Nagoya University

• Asai Takahiro

  Graduate School Of Engineering Nagoya University

• URANO Akihiro

  Graduate School of Human Informatics, Nagoya University

• Urano Akihiro

  Graduate School Of Engineering Nagoya University

• FUKUDA Yuuichi

  Graduate School of Engineering, Nagoya University

• Fukuda Yuuichi

  Graduate School Of Engineering Nagoya University

• Nagasaki Takanori

  Ecotopia Science Institute Nagoya University

• Kobayashi Yasushi

  Graduate School Of Engineering Nagoya University

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