Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
-
SAKAI Akira
Graduate School of Engineering, Nagoya University
-
YASUDA Yukio
Graduate School of Engineering, Nagoya University
-
TAKAHASHI Ryoya
Graduate School of Engineering, Nagoya University
-
SAKASHITA Mitsuo
Graduate School of Engineering, Nagoya University
-
ZAIMA Shigeaki
Center for Cooperative Research in Advanced Science and Technology, Nagoya University
-
NAKATSUKA Osamu
Center for Integrated Research in Science and Engineering, Nagoya University
-
IKEDA Hiroya
Graduate School of Engineering, Nagoya University
-
Sakai A
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
Ikeda Hiroya
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
Nakatsuka Osamu
Center For Integrated Research In Science And Engineering Nagoya University
-
KOBAYASHI Yasushi
Graduate School of Engineering, Nagoya University
-
Takahashi Ryoya
Graduate School Of Engineering Nagoya University
-
Kobayashi Y
Graduate School Of Engineering Nagoya University
関連論文
- Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Low-Temperature Formation of Epitaxial NiSi_2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
- Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
- HfO_2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic
- Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy
- Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy
- Growth of Silicon Nanocrystal Dots with High Number Density by Ultra-High-Vacuum Chemical Vapor Deposition
- Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials
- Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
- Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO_2-TiO_2 Composite Films
- Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
- Reactive Deposition Epitaxy of CoSi_2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces
- Surface and Interface Smoothing of Epitaxial CoSi_2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
- Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals
- Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System
- Pr-Oxide-Based Dielectric Films on Ge Substrates
- Behavior of Local Charge Trapping Sites in La_2O_3-Al_2O_3 Composite Films under Constant Voltage Stress
- Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy
- Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
- Surface Treatment of Ge(001) Surface by Radical Nitridation
- Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
- Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes
- Film structures and electrical properties of Pr silicate formed by pulsed laser deposition
- Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
- Conductance Oscillations in Low-Dimensional Ion Implanted Regions Annealed by Rapid Thermal Annealing
- Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy
- Hydrogen Effects on Si_Ge_x/Si Heteroepitaxial Growth by Si_2H_6- and GeH_4-Source Molecular Beam Epitaxy
- Effects of Nitrogen Addition to Microwave Oxygen Plasma in Surface Wave with Disk-Plate Window and Photoresist Ashing
- Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma
- Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition (Special Issue: Solid State Devices & Materials)
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
- Local Leakage Current of HfO_2 Thin Films Characterized by Conducting Atomic Force Microscopy
- B-64. Significance of EEC for Diagnosis of Intracranial tumor
- S-10. Electromyographical Analysis of the Patients with Cervical Cord Lesion
- Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
- Influences of Impurities on Oxidation Processes of Si(100) Substrates
- Influences of Impurities on Oxidation Processes of Si(100) Substrates
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Microscopic Observation of X-Ray Irradiation Damage in Ultra-Thin SiO_2 Films
- Microscopic Observation of X-Ray Irradiation Damages in Ultra-Thin SiO_2 Films
- Oxide Formation on Si(100)-2×1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Study on Oxidation of Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation
- Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme
- Control of Crystal Structure and Ferroelectric Properties of Pb(Zr_xTi_)O_3 Films Formed by Pulsed Laser Deposition
- Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates
- B-70. Significances of Angiogram for Diagnosis of Central Tumor
- Atomic-Scale Characterization of Nitridation Processes on Si(100)-$2\times 1$ Surfaces by Radical Nitrogen
- Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces: Comparative Study using Reactive Deposition Epitaxy
- Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen
- Characterization of Ion Beam Deposited ^Ag Thin Films on Si(111) Surface by means of Rutherford Backscattering Spectroscopy and Reflection High Energy Electron Diffraction
- Studies on Reaction Processes of Hydrogen and Oxygen Atoms with H_2O-Adsorbed Si(100) Surfaces by High-Resolution Electron Energy Loss Spectroscopy
- Improvements of Electrical Characteristics of Hf/p-Si(100) Interfaces by H-Termination
- Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure
- Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
- Oxidation Processes on H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy
- Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth
- Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes
- Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors
- Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System
- Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates
- Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
- Initial Oxidation Processes of H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy
- Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials
- Composition Dependence of Work Function in Metal (Ni,Pt)–Germanide Gate Electrodes
- Microscopic Observation of X-Ray Irradiation Damage in Ultra-Thin SiO2 Films
- Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2–TiO2 Composite Films
- Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers
- Surface and Interface Smoothing of Epitaxial CoSi2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
- Local Leakage Current of HfO2 Thin Films Characterized by Conducting Atomic Force Microscopy
- Reactive Deposition Epitaxy of CoSi2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces