Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces: Comparative Study using Reactive Deposition Epitaxy
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概要
- 論文の詳細を見る
Epitaxial growth of 20-nm-thick CoSi2 films on Si(001) surfaces has been investigated for a two-step growth and reactive deposition epitaxy (RDE) at growth temperatures of 320–680°C using in-situ reflection high-energy electron diffraction and scanning tunneling microscopy, and ex-situ X-ray diffraction and atomic force microscopy. For the RDE, three-dimensional CoSi2 islands with a {115}-faceted structure grow along the $\langle 110 \rangle$ directions and pinholes or channels with depths over $\sim$20 nm are formed. However, for the two-step growth, no {115}-faceted islands exist and the depth of pinholes or channels decreases greatly. In the two-step growth, cobalt is solely deposited at an elevated substrate temperature on an epitaxial CoSi2(001) film formed by solid-phase epitaxy of 0.23-nm-thick Co as the first step. The first-step CoSi2 film has effects on restraining the Si diffusion from the substrate at the pinhole sites and promoting the layer-by-layer growth at the second step. The original two-step growth technique will be highly suitable for the realization of high-quality epitaxial CoSi2 contacts in the future ULSI technology.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-01-15
著者
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Yasuda Y
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Yasuda Yukio
Department Of Applied Physics Osaka City University
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SAKAI Akira
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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ZAIMA Shigeaki
Center for Cooperative Research in Advanced Science and Technology, Nagoya University
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HAYASHI Yukihiro
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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Ikeda Hiroya
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Ikeda H
National Laboratory For High Energy Physics
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Zaima Shigeaki
Center For Cooperative Research In Advanced Science & Technology Nagoya University
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Katoh Tamiyu
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo
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Katoh Tamiyu
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Hayashi Yukihiro
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Yasuda Yukio
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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