Atomic-Scale Characterization of Nitridation Processes on Si(100)-$2\times 1$ Surfaces by Radical Nitrogen
スポンサーリンク
概要
- 論文の詳細を見る
We have investigated the initial nitridation process of Si(100)-$2\times 1$ surfaces by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The nitridation was performed by radical nitrogen at a high temperature of 850°C. After the radical-nitrogen exposure of about 1 Langmuir, linear defects perpendicular to dimer rows were formed. Furthermore, doublet dark lines were frequently observed in the STM image. STS analysis of the dark-line regions clarified that the initial nitridation reaction occurs preferentially at the backbonds of surface Si atoms. Then, the nitridation proceeds via lateral growth of two-dimensional nitride-islands. These islands grow preferentially along the $\langle 011\rangle$ direction perpendicular to the Si dimer rows. STS spectra obtained from the 0.5-nm-thick nitride islands distinctly showed a bandgap of about 4.0 eV that is very close to the bandgap of bulk Si3N4.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
-
Yasuda Y
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
Yasuda Yukio
Department Of Applied Physics Osaka City University
-
SAKAI Akira
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
-
ZAIMA Shigeaki
Center for Cooperative Research in Advanced Science and Technology, Nagoya University
-
IKEDA Hiroya
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
-
MATSUSHITA Daisuke
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
-
Matsushita Daisuke
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
Matsushita Daisuke
Department Of Architecture And Architectural Engineering Graduate School Of Engineering Kyoto Univer
-
Matsushita Daisuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
-
Ikeda Hiroya
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
Ikeda H
National Laboratory For High Energy Physics
-
Zaima Shigeaki
Center For Cooperative Research In Advanced Science & Technology Nagoya University
-
Yasuda Yukio
Department Of Applied Physics Faculty Of Engineering Nagoya University
-
Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
関連論文
- Development of High-Angular-Resolution Microdiffraction System for Reciprocal Space Map Measurements
- Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Low-Temperature Formation of Epitaxial NiSi_2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
- Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
- HfO_2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic
- Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy
- Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy
- Growth of Silicon Nanocrystal Dots with High Number Density by Ultra-High-Vacuum Chemical Vapor Deposition
- Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials
- Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
- Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO_2-TiO_2 Composite Films
- Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
- Reactive Deposition Epitaxy of CoSi_2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces
- Surface and Interface Smoothing of Epitaxial CoSi_2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
- Population Difference and Pulse-Mode Optogalvanic Effect on Hel(2^3S-3^3P) 388.9-nm
- Author's Reply
- Erratum : Excitation Mechanism of the B^3_g-A^3Σ^+_u ir Laser Transition in N_2 Molecule
- A TE-N_2-Laser-Pumped Dye Laser of Littman Type
- New Far Infrared Laser Lines from Optically Pumped Methyl Alcohol and Their Assignments
- Excitation Process of the N_2 IR (B^3Π_g-A^3Σ^+_u) Laser Transition. II
- Excitation Process of the N_2 IR (B^3Π_g-A^3Σ^+_u) Laser Transition
- Excitation Mechanism of the B^3II_g-A^3Σ^+_u ir Laser Transition in N_2 Molecule
- Nitrogen-Laser-induced B^3Σu→X^3Σg Fluorescence of S_2 Molecules
- Time Relationship btween uv and ir Light Pulses in Nitrogen Laser
- Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation ( Quantum Dot Structures)
- Surface Treatment of Ge(001) Surface by Radical Nitridation
- Conductance Oscillations in Low-Dimensional Ion Implanted Regions Annealed by Rapid Thermal Annealing
- Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy
- Hydrogen Effects on Si_Ge_x/Si Heteroepitaxial Growth by Si_2H_6- and GeH_4-Source Molecular Beam Epitaxy
- Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma
- A Soft Acoustic Mode in the Ferroelastic Phase Transition of LaNbO_4
- Phase I/II study of tandem high-dose chemotherapy with autologous peripheral blood stem cell transplantation for advanced multiple myeloma
- Carrier Transport Properties of Conductive p-Si Wires by Focused Ion Beam Implantation
- RELATIONSHIP OF THE PHYSIOLOGICAL VARIABLES STUDIED BY IMPEDANCE CARDIOGRAPHY AND THEIR SIGNIFICANCES IN ESSENTIAL HYPERTENSION : Cardiac Surgery II, Hemodialysis, Hypertension II : IInd Auditorium : Proceedings of the 43rd Annual Meeting of the Japanese
- Myelodysplastic Syndrome Following Therapy for Brain Tumor
- Isolation and Characterization of Tn5-Induced Mutants of Pseudomonas paucimobilis UT26 Defective in γ-Hexachlorocyclohexane Dehydrochlorinase (LinA)
- Quantum Chemical Study of the Oxidation Sites in Hydrogen- and Water-Terminated Si Dimers : Attempt to Understand the Si-Si Back-Bond Oxidation on the Si Surface
- In-Situ Micro-Raman Scattering Investigation of LaNi_Co_Mn_Al_ Metal Hydride under Hydrogen Atmosphere
- VENTRICULAR SEPTAL DEFECT FOLLOWING ACUTE MYOCARDIAL INFARCTION : REPORT OF SIX CASES WITH SURGICAL TREATMENT
- Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- DETECTION OF RIGHT VENTRICULAR INFARCTION BY RADIONUCLIDE ANGIOCARDIOGRAPHY USING RIGHT VENTRICULAR REGIONAL EJECTION FRACTION IMAGE : Radio isotope : FREE COMMUNICATIONS (Abstract) : 45 Annual Scientific Meeting, Japanese Circulation Society
- CIRCULATORY EFFECT OF OP-1206, AN ORAL PROSTAGLANDIN E_1 DERIVATIVE : Cardiovascular drugs (II) : FREE COMMUNICATIONS (Abstract) : 45 Annual Scientific Meeting, Japanese Circulation Society
- HEMODYNAMIC RESPONSES TO VOLUME EXPANSION AND NITROGLYCERIN APPLICATION IN ISCHEMIC HEART DISEASE : Ventricular Function in Ischemic Heart Disease I : PROCEEDINGS OF THE 44th ANNUAL SCIENTIFIC MEETING OF THE JAPANESE CIRCULATION SOCIETY
- RI-ANGIOGRAPHIC ANALYSIS OF LEFT VENTRICULAR WALL MOTION IN ISCHEMIC HEART DISEASE : Computer Tomography, Radio-isotope : IVth Auditorium : Proceedings of the 43rd Annual Meeting of the Japanese Circulation Society, Tokyo, 1979
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
- Elastic Anomaly of the Ferroelectric Phase Transition of Li_2Ge_7O_ Studied by the Brillouin Scattering
- Plasma Carnitine Concentrations in Patients Undergoing Open Heart Surgery
- Local Leakage Current of HfO_2 Thin Films Characterized by Conducting Atomic Force Microscopy
- Brillouin Scattering Study of Deuterated Dicalcium Strontium Propionate,Ca_2Sr (C_2D_5CO_2)_6
- Spontaneous Polarization of Deuterated Dicalcium Strontium Propionate,Ca_2Sr (C_2D_5CO_2)_6
- On the ω-q Relation of the Soft Mode of KDP Studied by Light Scattering under a High Pressure
- Elastic Instability in the Ferroelastic Phase Transition of TlH_2PO_4 Studied by Brillouin Scattering
- Dielectric Anomaly at the Phase Transition of RbD_3(SeO_3)_2
- Incommensurate Phase in γ-Irradiated RbH_3(SeO_3)_2 and RbD_3(SeO_3)_2
- Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
- Influences of Impurities on Oxidation Processes of Si(100) Substrates
- Influences of Impurities on Oxidation Processes of Si(100) Substrates
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Microscopic Observation of X-Ray Irradiation Damage in Ultra-Thin SiO_2 Films
- Microscopic Observation of X-Ray Irradiation Damages in Ultra-Thin SiO_2 Films
- Oxide Formation on Si(100)-2×1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Study on Oxidation of Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Optical Phonons in Ferroelectric-Semiconductor Zn_Li_O Single Crystal Studied by Micro-Raman Scattering : Condensed Matter: Electronic Properties, etc.
- Micro-Raman Scattering Study of the Ferroelectric Phase Transition in Tb_2(MoO_4)_3 in the Frequency Region of MoO_4 Internal Modes
- Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- The Maturation of Myeloma Cells Correlates with Sensitivity to Chemotherapeutic Agents
- Temperature Dependence of Desorption in Highly Photo-Excited CdS
- Dislocation propagation in GaN films formed by epitaxial lateral overgrowth
- A Central Peak in the Order-Disorder Phase Transition of Sodium Nitrate
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Rayleigh and Brillouin Scattering in RbH_3(SeO_3)_2 near the Phase Transition Temperature
- Infrared Enhancement in Nitrogen Laser operating near Threshold by addition of He
- Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation
- Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme
- Clinical significance of co-expression of CD21 and LFA-1 in B-cell lymphoma
- Control of Crystal Structure and Ferroelectric Properties of Pb(Zr_xTi_)O_3 Films Formed by Pulsed Laser Deposition
- Pulsed-Laser Induced Desorption in GaAs :A Dynamic Pulse Mass Counting Study
- Temperature Dependence of Raman Scattering Spectra in Lead Nitrate Crystal
- Sex Determination of Bovine Embryos by the Polymerase Chain Reaction Using Y-Specific Primers
- Progressive Myeloma after Thalidomide Therapy in a Patient with Immature Phenotype of Myeloma (Plasma) Cells
- Brillouin Scattering Study of Elastic Anisotropy in an Injection Molded Polycarbonate Solid
- Thromboembolism Originated from the Pulmonary Artery Stump after Fontan Operation
- A Diffusive Mode in KH_2PO_4 Studied with a Tandem System Using a Fabry-Perot Interferometer and a Double-Grating Monochromator
- Atomic-Scale Characterization of Nitridation Processes on Si(100)-$2\times 1$ Surfaces by Radical Nitrogen
- Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces: Comparative Study using Reactive Deposition Epitaxy
- Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen
- Establishment of an HS23 stromal cell-dependent myeloma cell line : fibronectin and IL-6 are critical
- Clinical Significance of Serum S-100β Protein Level After Pediatric Cardiac Surgery
- Giant granulocytic sarcoma of the vagina concurrent with acute myeloid leukemia with t(8;21)(q22;q22) translocation
- PREDICTION OF UNDISTURBED SILTY-CLAY BEHAVIOUR IN A MULTI-CONTROLLED CYCLIC TRIAXIAL TEST
- Studies on Reaction Processes of Hydrogen and Oxygen Atoms with H_2O-Adsorbed Si(100) Surfaces by High-Resolution Electron Energy Loss Spectroscopy
- Improvements of Electrical Characteristics of Hf/p-Si(100) Interfaces by H-Termination
- Oxidation Processes on H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy