Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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酒井 明
京大工
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Yasuda Y
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Yasuda Yukio
Department Of Applied Physics Osaka City University
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SAKAI Akira
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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KONDO Hiroki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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SEKO Akiyoshi
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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ZAIMA Shigeaki
Center for Cooperative Research in Advanced Science and Technology, Nagoya University
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WATANABE Yukihiko
Toyota Central R&D Labs., Inc.
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近藤 博基
名古屋大学大学院工学研究科
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Watanabe Yukihiko
Toyota Central R&d Labs. Inc.
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Sakai A
Division Of Electrical And Computer Engineering Yokohama National University
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Seko Akiyoshi
Graduate School Of Engineering Nagoya University
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