Yasuda Y | Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

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概要

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著作論文

Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Low-Temperature Formation of Epitaxial NiSi_2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
HfO_2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic
Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy
Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy
Growth of Silicon Nanocrystal Dots with High Number Density by Ultra-High-Vacuum Chemical Vapor Deposition
Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials
Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO_2-TiO_2 Composite Films
Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
Reactive Deposition Epitaxy of CoSi_2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces
Surface and Interface Smoothing of Epitaxial CoSi_2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation ( Quantum Dot Structures)
Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy
Hydrogen Effects on Si_Ge_x/Si Heteroepitaxial Growth by Si_2H_6- and GeH_4-Source Molecular Beam Epitaxy
Carrier Transport Properties of Conductive p-Si Wires by Focused Ion Beam Implantation
Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
Influences of Impurities on Oxidation Processes of Si(100) Substrates
Influences of Impurities on Oxidation Processes of Si(100) Substrates
Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
Microscopic Observation of X-Ray Irradiation Damages in Ultra-Thin SiO_2 Films
Oxide Formation on Si(100)-2×1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
Study on Oxidation of Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation
Control of Crystal Structure and Ferroelectric Properties of Pb(Zr_xTi_)O_3 Films Formed by Pulsed Laser Deposition
Atomic-Scale Characterization of Nitridation Processes on Si(100)-$2\times 1$ Surfaces by Radical Nitrogen
Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces: Comparative Study using Reactive Deposition Epitaxy
Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen
Studies on Reaction Processes of Hydrogen and Oxygen Atoms with H_2O-Adsorbed Si(100) Surfaces by High-Resolution Electron Energy Loss Spectroscopy
Improvements of Electrical Characteristics of Hf/p-Si(100) Interfaces by H-Termination
Oxidation Processes on H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy

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