Sakai A | Division Of Electrical And Computer Engineering Yokohama National University

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著作論文

Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Low-Temperature Formation of Epitaxial NiSi_2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
HfO_2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic
Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy
Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy
Growth of Silicon Nanocrystal Dots with High Number Density by Ultra-High-Vacuum Chemical Vapor Deposition
Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials
Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO_2-TiO_2 Composite Films
Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
Reactive Deposition Epitaxy of CoSi_2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces
Surface and Interface Smoothing of Epitaxial CoSi_2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals
Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System
Pr-Oxide-Based Dielectric Films on Ge Substrates
Behavior of Local Charge Trapping Sites in La_2O_3-Al_2O_3 Composite Films under Constant Voltage Stress
Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy
Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
Surface Treatment of Ge(001) Surface by Radical Nitridation
Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes
Film structures and electrical properties of Pr silicate formed by pulsed laser deposition
26pPSB-54 AgおよびAuAg合金1Go接点の破断電圧(領域9ポスターセッション,領域9,表面・界面,結晶成長)
26pRJ-8 Au 1G_0接点の電流誘起破断(ナノチューブ・ナノワイヤ,領域9,表面・界面,結晶成長)
20pWH-3 原子サイズSi接点のコンダクタンス(ナノチューブ・ナノワイヤ,領域9,表面・界面,結晶成長)
24aPS-97 金属単原子接点のRF信号伝達(24aPS 領域9ポスターセッション,領域9(表面・界面,結晶成長))
29pPSB-10 TiおよびAl合金原子サイズ接点のコンダクタンス(29pPSB 領域9ポスターセッション,領域9(表面・界面,結晶成長))
22pPSB-29 Au/BDT/Au単分子接合の高バイアス破断(領域9ポスターセッション,領域9,表面・界面,結晶成長)
25pPSB-63 多層カーボンナノチューブの交流インピーダンス(25pPSB 領域9ポスターセッション,領域9(表面・界面,結晶成長))
30pXJ-1 原子サイズZn接点のコンダクタンス(30pXJ ナノチューブ・ナノワイヤ,領域9(表面・界面,結晶成長))
20pYE-4 Au 1G_0接点の寿命分布(ナノチューブ・ナノワイヤ,領域9(表面・界面,結晶成長))
24pXC-9 Ptナノ接点の電流誘起破断(ナノワイヤ・ナノチューブ,領域9(表面・界面, 結晶成長))
13aXG-2 Al ナノ接点における電流誘起不安定性(表面ナノ構造量子物性・表面局所光学現象, 領域 9)
30pWP-7 Cuナノ接点における電流誘起不安定性(ナノチューブ・ナノワイヤ)(領域9)
27aWP-13 希釈冷凍機冷却による超低温STMの開発(表面界面電子物性(半導体・無機))(領域9)
Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition (Special Issue: Solid State Devices & Materials)
Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
H-Tree-Type Optical Clock Signal Distribution Circuit Using a Si Photonic Wire Waveguide : Optics and Quantum Electronics
Low Loss Ultra-Small Branches in a Silicon Photonic Wire Waveguide(Special Issue on Recent Progress of Integrated Photonic Devices)
Horizontal Distribution of Stolons of a Temperate Liana Wisteria floribunda DC. and Its Ecological Significance

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