Matsushita Daisuke | Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

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著作論文

Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
Evaluation of Flexible Security Models on a Mobile Agent Platform
Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
Optimizing Parallel Layout of MRHC to Improve Quality of Views from Dwelling Units with Genetic Algorithm(Architectural/Urban Planning and Design)
Emergence of a Parallel Layout Arising from Users' Pursuits of Better Living Conditions of Their Dwelling Units in MRHC with MAS(Architectural Planning and Design)
Relation between People's Evaluations on Living Conditions and Plan Locations of Dwelling Units in MFRHC with Parallel Layout in Beijing
Atomic-Scale Characterization of Nitridation Processes on Si(100)-$2\times 1$ Surfaces by Radical Nitrogen
Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen
Leakage mechanism of ultrathin SiON gate dielectric
Determination of tunnel mass and thickness of gate oxide including poly-Si/SiO_2 and Si/SiO_2 interfacial transition layers
Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)

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