Muraoka Kouichi | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

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概要

• MURAOKA Kouichiの詳細を見る
• 同名の論文著者
• Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporationの論文著者

関連著者

• Muraoka Kouichi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Matsushita Daisuke

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• WATANABE Hiroshi

  Advanced Science Research Center, Japan Atomic Energy Research Institute

• Muraoka Kouichi

  Advanced Lsi Technology Labs Toshiba Corp.

• Matsushita Daisuke

  Advanced Lsi Technology Labs Toshiba Corp.

• Watanabe Hiroshi

  Advanced Lsi Technology Labs Toshiba Corp.

• Yasuda Naoki

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Satake Hideki

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Koike Masahiro

  Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation

• Muraoka Kouichi

  Advanced Lsi Technology Laboratory Corporate Rd Center Toshiba Corporation

• Muraoka Kouichi

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Koike Masahiro

  Advanced Lsi Technology Laboratory Toshiba Corporation

• KATO Koichi

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation

• Kato Koichi

  Advanced Lsi Technology Labs Toshiba Corp.

• Kato Koichi

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Muraoka Kouichi

  Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

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著作論文

• The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films : Experimental Evaluation and Analysis of Nonlinearity
• Leakage mechanism of ultrathin SiON gate dielectric
• Determination of tunnel mass and thickness of gate oxide including poly-Si/SiO_2 and Si/SiO_2 interfacial transition layers
• Thermal Stability of Stacked High-k Dielectrics on Silicon and Its Improvement by Helium Annealing
• Suppression of Interfacial Reactions in Tungsten/Hafnia/Germanium Structures by Water Vapor Discharge
• Thermal Stability of Stacked high-κ Dielectrics on Silicon and Its Improvement by Helium Annealing(High-κ Gate Dielectrics)

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