Yasuda Naoki | Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

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概要

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著作論文

A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
Two Correlated Mechanisms in Thin SiO_2 Breakdown
Reliability of Structurally Modified Ultra-Thin Gate Oxides
Advanced Micro-Lithography Process for i-line Lithography : Instrumentation, Measurement, and Fabrication Technology
Advanced Micro-Lithography Process with Chemical Shrink Technology
Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+-Polysilicon/HfAlO_x/SiO_2 N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
Novel Silicone Polymeric Material with High Thermal Stability for Optical Waveguides
Polyphenylsilsesquioxane Partially-substituted with Germanium : Refractive Index Controllability and Thermal Stability
A Novel Heat-Resist Silicone Polymeric Material with Refractive Index Controllability
A Novel Photosensitive Silicone Ladder Polymer: Synthesis, Photochemical, and Thermal Characterstics
Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2 Dielectrics
Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
Dynamics of the Charge Centroid in Metal--Oxide--Nitride--Oxide--Silicon Memory Cells during Avalanche Injection and Fowler--Nordheim Injection Based on Incremental-Step-Pulse Programming
The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films : Experimental Evaluation and Analysis of Nonlinearity
Extraction of Interface State Density in Ultra-Thin Gate Dielectrics : A Composition Method of Ideal CV Curves in High-Frequency CV Analysis
Direct Measurement of Back-Tunneling Current during Program/Erase Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories and Its Dependence on Gate Work Function
A New Method to Extract the Charge Centroid in the Program Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories
Advanced Micro-Lithography Process with Chemical Shrink Technology

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