岡田健治 | 半導体MIRAI-ASET

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著作論文

High-k MOSFETに固有な移動度劣化機構の提案(IEDM(先端CMOSデバイス・プロセス技術))
キャリア分離法を用いた high-k stack ゲート絶縁膜のキャリア伝導及び絶縁性劣化機構の解析
Observation of Parallel and Perpendicular Propagations of Ion Sound Waves in a Linear Turbulently Heated Plasma
Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
Ablative Acceleration of Pellet Shells Irradiated by External Soft X-ray Sources
Excitonic Structure of CuGaS_Se_ and CuAlS_Se_
Preheating Energy in a Soft-X-Ray-Accelerated Foil
Efficient Laser Absorption in Low Density Foam Target
Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
Effect of Helium Gas Pressure on X-Ray Mask Heating during Synchrotron Radiation Exposure
Wafer Temperature Measurement and X-Ray Mask Temperature Evaluation in Synchrotron Radiation Lithography
Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
極薄ゲート酸化膜におけるストレス誘起リーフ電流と絶縁破壊
Atomic-Order Planarization of Ultrathin SiO_2/Si(001) Interfaces
An Experimental Evidence to Link the Origins of "A Mode" and "B Mode" Stress Induced Leakage Current
Extended Time Dependent Dielectric Breakdown Model Based on Anomalous Gate Area Dependence of Lifetime in Ultra Thin Silicon Dioxides
Extended TDDB Model Based on Anomalous Gate Area Dependence in Ultra Thin Silicon Dioxides
New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides

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