極薄ゲート酸化膜におけるストレス誘起リーフ電流と絶縁破壊
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概要
- 論文の詳細を見る
- 1996-12-05
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関連論文
- High-k MOSFETに固有な移動度劣化機構の提案(IEDM(先端CMOSデバイス・プロセス技術))
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- Excitonic Structure of CuGaS_Se_ and CuAlS_Se_
- Biexciton Luminescence from GaN Epitaxial Layers
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- Preheating Energy in a Soft-X-Ray-Accelerated Foil
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- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
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- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- 極薄ゲート酸化膜におけるストレス誘起リーフ電流と絶縁破壊
- Atomic-Order Planarization of Ultrathin SiO_2/Si(001) Interfaces
- An Experimental Evidence to Link the Origins of "A Mode" and "B Mode" Stress Induced Leakage Current
- Extended Time Dependent Dielectric Breakdown Model Based on Anomalous Gate Area Dependence of Lifetime in Ultra Thin Silicon Dioxides
- Extended TDDB Model Based on Anomalous Gate Area Dependence in Ultra Thin Silicon Dioxides
- New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides