A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• 岡田 健治

  半導体MIRAI-ASET

• Ono Kouichi

  Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University

• Okada K

  Yamaguchi Univ. Yamaguchi Jpn

• Eriguchi Koji

  Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University

• 岡田 健治

  松下電器産業(株)

• OKADA Kenji

  MIRAI-ASET, AIST

• Hamada Daisuke

  Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University

• ERIGUCHI Koji

  Graduate School of Engineering, Kyoto University

• HAMADA Daisuke

  Graduate School of Engineering, Kyoto University

• KAMEI Masayuki

  Graduate School of Engineering, Kyoto University

• ONO Kouichi

  Graduate School of Engineering, Kyoto University

• Kamei Masayuki

  Graduate School Of Engineering Kyoto University

• Hamada Daisuke

  Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Eriguchi Koji

  Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Ono Kouichi

  Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

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