The Applicability of Formal Specification to Maintenance of Large-Scale Software
スポンサーリンク
概要
- 論文の詳細を見る
For over a decade, major reserach efforts have been devoted to formal specification techniques for system development. As a result, many specification languages and their support tools have been developed. But not much research has been done on the application of formal specifications to software maintenance. We developed a formal specification language called Waseda Specification Notation (WSN), and have been attempting to apply it to some existing large-scale software systems. One of these is the scheduler of the VM/SP operating system, which was completely specified in WSN. We tuned the scheduler on the basis of the formal specification described, and according to the current characteristics of our computer environment. This paper gives a detailed introduction to the benefits of applying formal specification methods during the maintenance of large systems. Experiences obtained during the study are also described.
- 一般社団法人情報処理学会の論文
- 1991-12-31
著者
-
Ono Kouichi
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
-
Ono K
Department Of Electrical Engineering School Of Science And Engineering Waseda University
-
KAWANO SEIICHI
Yamato Laboratory, IBM Japan, Ltd.
-
FUKAZAWA YOSHIAKI
Department of Electrical Engineering, School of Science and Engineering, Waseda University
-
KADOKURA TOSHIO
Department of Electrical Engineering, School of Science and Engineering, Waseda University
-
Kawano Seiichi
Yamato Laboratory Ibm Japan Ltd.
-
Kadokura Toshio
Department Of Electrical Engineering School Of Science And Engineering Waseda University
-
Fukazawa Yoshiaki
Department Of Electrical Engineering School Of Science And Engineering Waseda University
-
Ono Kouichi
Department Of Aeronautical Engineering Faculty Of Engineering Kyoto University
関連論文
- An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching
- Numerical Analysis of the Electromagnetic Fields in a Microwave Plasma Source Excited by Azimuthally Symmetric Surface Waves
- Arg124Cys Mutation of the βig-h3 Gene in a Japanese Family With Lattice Corneal Dystrophy Type I
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster
- A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 Plasmas
- Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology
- Selective Etching of High-k Dielectric HfO_2 Films over Si in BCl_3-Containing Plasmas without rf Biasing
- Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas
- Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness
- Particle Simulations of Sheath Dynamics in Low-Pressure Capacitively Coupled Argon Plasma Discharges
- Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity
- The Applicability of Formal Specification to Maintenance of Large-Scale Software
- Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires
- Abstraction Mechanisms Supported by a Macro Processor
- An Inductive Inference Algorithm to Synthesize Prolog Programs from Specification by Example
- Plasma Formation in a Neutral Gas by a Short-Pulsed, High-Current Electron Beam
- Beam and Plasma Currents in an Injection of a Short-Pulsed, High-Current Electron Beam into Initially-Neutral Gases
- Visible and Ultraviolet High-Intensity Spectral Lines in Electron-Beam-Produced Plasmas
- Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition
- Numerical Investigation on Origin of Microscopic Surface Roughness during Si Etching by Chemically Reactive Plasmas
- Numerical Study on Si Etching by Monatomic Br+/Cl+ Beams and Diatomic Br2+/Cl2+/HBr+ Beams
- Molecular Dynamics Simulation of Si Etching by Off-Normal Cl+ Bombardment at High Neutral-to-Ion Flux Ratios
- Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology
- UV〜Near-IR Laser Lines in Electron-Beam-Produced Rare Gas Plasmas
- Effects of Mask Pattern Geometry on Plasma Etching Profiles
- Laser Action of Ionized and Neutral Atomic Lines in Electron-Beam-Produced Rare Gas Plasmas
- On Early-Stage-Excitation Processes of KrII and XeII Lines in Pulsed-Electron-Beam Produced Plasmas
- A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl2/O2 Plasmas
- An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching
- Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence
- Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster
- An Improvement of Stillinger–Weber Interatomic Potential Model for Reactive Ion Etching Simulations
- Microwave-Excited High-Density Plasma Column Sustained along Metal Rod at Negative Voltage
- Influence of Organizational Change on Product Metrics and Defects