Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
スポンサーリンク
概要
- 論文の詳細を見る
We propose an advanced photoreflectance (PR) spectroscopy technique, for use as a method for the contactless analysis of plasma-induced damage (physical damage) on Si. Si wafers damaged by Ar plasma were placed on a measurement stage capable of sample cooling by liquid nitrogen. In comparison to the spectra at 300 K, the signal intensity at 90 K was increased by cooling. A spectral peak of a heavily-damaged sample was identified at 90 K, which was difficult at 300 K. Changes in the surface potential induced by plasma exposure ($\Delta V_{\text{s}}$) were calculated by analyzing the spectral parameters. Areal densities of trapped charges were estimated from $\Delta V_{\text{s}}$. The temperature dependence of the PR spectra was discussed, and the primary cause of the increase in signal intensity was attributed to the reduced electron--phonon interactions in a lower temperature range. The proposed technique expands the applicable range of PR-based damage analysis.
- 2011-08-25
著者
-
ERIGUCHI Koji
Graduate School of Engineering, Kyoto University
-
ONO Kouichi
Graduate School of Engineering, Kyoto University
-
Matsuda Asahiko
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
-
Matsuda Asahiko
Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
-
Takao Yoshinori
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
-
Nakakubo Yoshinori
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
-
Nakakubo Yoshinori
Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
-
Eriguchi Koji
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
-
Ono Kouichi
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
関連論文
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Comparative Study of Plasma-Charging Damage in High-$k$ Dielectric and p--n Junction and Their Effects on Off-State Leakage Current of Metal--Oxide--Semiconductor Field-Effect Transistors
- Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
- Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching
- Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
- Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology (Special issue: Dry process)
- Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal--Oxide--Semiconductor Field-Effect Transistor
- Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-$k$ and SiO2 Gate Dielectrics
- Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate