Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal--Oxide--Semiconductor Field-Effect Transistor

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We discuss plasma charging damage (PCD) to high-k gate dielectrics and the resultant threshold voltage shift (\Delta V_{\text{th}}) in n-channel metal--oxide--semiconductor field-effect transistors (n-ch MOSFETs). The PCD induced by the antenna effect is focused on, and \Delta V_{\text{th}} and its variation are estimated for MOSFETs treated by various plasma processes. We propose a \Delta V_{\text{th}} variation model based on both the power-law dependence of \Delta V_{\text{th}} on the antenna ratio r (= exposed metal interconnect area/gate area) and the r distribution deduced from an interconnect-length distribution function (ILDF) in a large-scale integrated (LSI) circuit. Then, we simulate the variations in \Delta V_{\text{th}} [\sigma(\Delta V_{\text{th}})] and the subthreshold leakage current I_{\text{off}} [\sigma(I_{\text{off}})], in accordance with the employed r distribution. The model prediction quantitatively shows the effects of PCD on \sigma(\Delta V_{\text{th}}) and \sigma(I_{\text{off}}): The antenna effect is found to increase \sigma(\Delta V_{\text{th}}) and \sigma(I_{\text{off}}).
2011-10-25