Kamei Masayuki | Graduate School Of Engineering Kyoto University
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概要
関連著者
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Kamei Masayuki
Graduate School Of Engineering Kyoto University
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Eriguchi Koji
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Ono Kouichi
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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ONO Kouichi
Graduate School of Engineering, Kyoto University
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ERIGUCHI Koji
Graduate School of Engineering, Kyoto University
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Hamada Daisuke
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
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HAMADA Daisuke
Graduate School of Engineering, Kyoto University
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Takao Yoshinori
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Hamada Daisuke
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Ono Kouichi
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
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Eriguchi Koji
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
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OKADA Kenji
MIRAI-ASET, AIST
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KAMEI Masayuki
Graduate School of Engineering, Kyoto University
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Fukumoto Hiroshi
Graduate School Of Engineering Kyoto University
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Ohno Akira
Graduate School Of Engineering Kyoto University
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Takao Yoshinori
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Matsuda Asahiko
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Nakakubo Yoshinori
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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岡田 健治
半導体MIRAI-ASET
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Okada K
Yamaguchi Univ. Yamaguchi Jpn
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岡田 健治
松下電器産業(株)
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OHNO Akira
Graduate School of Engineering, Kyoto University
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FUKUMOTO Hiroshi
Graduate School of Engineering, Kyoto University
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Kamei Masayuki
Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
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Kamei Masayuki
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Nakakubo Yoshinori
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Matsuda Asahiko
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Takao Yoshinori
Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
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Ono Kouichi
Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
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Ono Kouichi
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Ohno Akira
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
著作論文
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Comparative Study of Plasma-Charging Damage in High-$k$ Dielectric and p--n Junction and Their Effects on Off-State Leakage Current of Metal--Oxide--Semiconductor Field-Effect Transistors
- Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology (Special issue: Dry process)
- Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal--Oxide--Semiconductor Field-Effect Transistor
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-$k$ and SiO2 Gate Dielectrics
- Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO