Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology (Special issue: Dry process)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Kamei Masayuki
Graduate School Of Engineering Kyoto University
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Matsuda Asahiko
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Takao Yoshinori
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Nakakubo Yoshinori
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Eriguchi Koji
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Ono Kouichi
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
関連論文
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
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- Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
- Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching
- Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
- Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology (Special issue: Dry process)
- Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal--Oxide--Semiconductor Field-Effect Transistor
- Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-$k$ and SiO2 Gate Dielectrics
- Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate
- Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO