Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers

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概要

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• The defect generation process in Si surface layer induced by plasma exposures is studied by two optical analyses, spectroscopic ellipsometry (SE) and photoreflectance spectroscopy (PR). Two plasma sources with Ar-gas mixtures are employed; one is DC plasma and the other, electron cyclotron resonance (ECR) plasma. In the case of Ar-DC plasma exposure with 300 V bias, the SE analysis with an optimized optical model determines 1-nm-thick interfacial layer (IL) between the surface layer and the substrate, while in the case of the ECR, approximately 0.5-nm-thick interfacial layer is identified. This difference is attributed to that in self-bias voltages ($V_{\text{dc}}$) between two plasma sources. In order to quantify the damage, we have modified the PR analysis technique in order to evaluate the plasma-induced carrier trap site density, by correlating the Si surface potential change to the trapped carrier density. Combined with the results by plasma diagnostics, we found that the calculated defect generation probabilities by an impinging ion were the orders of $10^{-2}$ and $10^{-5}$ in the present DC and ECR plasma conditions, respectively, and that the probability depends on the $V_{\text{dc}}$. The obtained results enable us to predict the plasma-induced physical damage to the devices in advance at the stage of plasma process designs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Hamada Daisuke

  Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University

• ERIGUCHI Koji

  Graduate School of Engineering, Kyoto University

• HAMADA Daisuke

  Graduate School of Engineering, Kyoto University

• ONO Kouichi

  Graduate School of Engineering, Kyoto University

• Kamei Masayuki

  Graduate School Of Engineering Kyoto University

• Fukumoto Hiroshi

  Graduate School Of Engineering Kyoto University

• Ohno Akira

  Graduate School Of Engineering Kyoto University

• Kamei Masayuki

  Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Ono Kouichi

  Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Hamada Daisuke

  Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Ohno Akira

  Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Eriguchi Koji

  Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Ono Kouichi

  Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

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