Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching
スポンサーリンク
概要
- 論文の詳細を見る
We investigated damaged-layer formation on the Si substrate surface induced by high-energy ion bombardment during plasma processing, by focusing on ion energy distribution function (IEDF). We introduced a modified range theory for the projection of incident ions and applied the model to damaged-layer formation under various plasma conditions --- various rf bias frequencies and waveforms, furthermore their single- or dual-frequency bias configurations. Damaged-layer thickness and residual defect site density after the wet-etch process following the plasma treatment were simulated. The IEDF having more high-energy ions induces the formation of thicker damaged layer than in the case of a monochromatic ion energy when the average ion energies are the same. However, we found that, owing to the stochastic effect on the ion-projected range, the effects of bias frequency and the waveform were suppressed, i.e., the thickness of the damaged layer and the density of residual defect sites are weakly dependent on IEDFs under the same average incident ion energy. The present findings obtained by the model prediction are significant and useful for designing bias configurations for future plasma processes.
- 2011-08-25
著者
-
ERIGUCHI Koji
Graduate School of Engineering, Kyoto University
-
ONO Kouichi
Graduate School of Engineering, Kyoto University
-
Takao Yoshinori
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
-
Takao Yoshinori
Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
-
Eriguchi Koji
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
-
Ono Kouichi
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
関連論文
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Comparative Study of Plasma-Charging Damage in High-$k$ Dielectric and p--n Junction and Their Effects on Off-State Leakage Current of Metal--Oxide--Semiconductor Field-Effect Transistors
- Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
- Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching
- Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
- Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology (Special issue: Dry process)
- Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal--Oxide--Semiconductor Field-Effect Transistor
- Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-$k$ and SiO2 Gate Dielectrics