Takao Yoshinori | Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

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概要

• Takao Yoshinoriの詳細を見る
• 同名の論文著者
• Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japanの論文著者

関連著者

• Takao Yoshinori

  Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Eriguchi Koji

  Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Ono Kouichi

  Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• ERIGUCHI Koji

  Graduate School of Engineering, Kyoto University

• ONO Kouichi

  Graduate School of Engineering, Kyoto University

• Kamei Masayuki

  Graduate School Of Engineering Kyoto University

• Matsuda Asahiko

  Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Nakakubo Yoshinori

  Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Takao Yoshinori

  Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Takao Yoshinori

  Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan

• Kamei Masayuki

  Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan

• Nakakubo Yoshinori

  Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Matsuda Asahiko

  Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Matsuda Asahiko

  Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan

• Nakakubo Yoshinori

  Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan

• Ono Kouichi

  Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan

• Tatsumi Tetsuya

  Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan

• Fukasawa Masanaga

  Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan

• TATSUMI Tetsuya

  Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation

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著作論文

• Comparative Study of Plasma-Charging Damage in High-$k$ Dielectric and p--n Junction and Their Effects on Off-State Leakage Current of Metal--Oxide--Semiconductor Field-Effect Transistors
• Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
• Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching
• Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
• Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology (Special issue: Dry process)
• Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
• Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal--Oxide--Semiconductor Field-Effect Transistor

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