TATSUMI Tetsuya | Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation

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著作論文

Prediction of Fluctuations in Plasma–Wall Interactions Using an Equipment Engineering System
Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion
Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
Analysis of Plasma Wall Reactions Using Virtual Optical Emission Spectrometry Signal during Dielectric Etching
Numerical Simulation Method for Plasma-Induced Damage Profile in SiO Etching
Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes (Special Issue : Dry Process)
Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO_2 over Si Substrate by Fluorocarbon Plasma

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