Tatsumi Tetsuya | Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
スポンサーリンク
概要
- 同名の論文著者
- Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japanの論文著者
関連著者
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Hamaguchi Satoshi
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
-
Fukasawa Masanaga
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
TATSUMI Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
-
TOMIYA Shigetaka
Sony Corporation Research Center
-
Sekine Makoto
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
-
Hori Masaru
Plasma Nanotechnology Research Center Nagoya University
-
Ishikawa Kenji
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
-
Karahashi Kazuhiro
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
-
Minami Masaki
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Matsumoto Ryosuke
Sony Shiroishi Semiconductor Inc., Shiroishi, Miyagi 980-8579, Japan
-
Chen Shang
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Uesawa Fumikatsu
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, SBG, PDSG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Ohchi Tomokazu
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Kobayashi Shoji
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Kugimiya Katsuhisa
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Kinoshita Takashi
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Takizawa Toshifumi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Kamide Yukihiro
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Ito Tomoko
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
-
Sekine Makoto
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Ishikawa Kenji
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Uesawa Fumikatsu
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, SBG, PDSG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Hamaguchi Satoshi
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
-
Hori Masaru
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Ishikawa Kenji
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Hori Masaru
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Sekine Makoto
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Uesawa Fumikatsu
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
著作論文
- Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion
- Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
- Reducing Damage to Si Substrates during Gate Etching Processes