Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion
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概要
- 論文の詳細を見る
The cause of Si recess (i.e., formation of shallow hollows on a Si surface after removal of an oxide layer from the Si surface in a polycrystalline silicon gate etching process by a HBr plasma) has been identified as ion assisted oxygen diffusion, i.e., oxygen diffusion enhanced by hydrogen ion bombardment from the plasma. Both plasma and multi-beam experiments were employed for the analysis of this oxidation mechanism. It has been also found in the analysis that oxidation of a Si surface exposed to oxygen radicals is significantly enhanced only if the surface is subject to both oxygen radical supply and energetic hydrogen ion bombardment simultaneously.
- 2011-08-25
著者
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Hamaguchi Satoshi
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
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Karahashi Kazuhiro
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, SBG, PDSG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Ito Tomoko
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, SBG, PDSG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Hamaguchi Satoshi
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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TATSUMI Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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