Tatsumi Tetsuya | Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan

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著作論文

Prediction of Fluctuations in Plasma–Wall Interactions Using an Equipment Engineering System
Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion
Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
Analysis of Plasma Wall Reactions Using Virtual Optical Emission Spectrometry Signal during Dielectric Etching
Reducing Damage to Si Substrates during Gate Etching Processes
Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes

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