Ishikawa Kenji | Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
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概要
- 同名の論文著者
- Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)の論文著者
関連著者
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Ishikawa Kenji
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
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Sekine Makoto
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Ishikawa Kenji
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Ishikawa Kenji
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Hori Masaru
Plasma Nanotechnology Research Center Nagoya University
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Hori Masaru
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
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Kono Akihiro
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Hori Masaru
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Kondo Hiroki
Deparment Of Physics Saga University
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KANO Hiroyuki
NU Eco-Engineering Co., Ltd.
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TOMIYA Shigetaka
Sony Corporation Research Center
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Suu Koukou
Institute For Semiconductor Technologies Ulvac Inc.
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ISHIKAWA Kenji
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies(ASET)
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Sumi Naoya
Department of Mathematics Tokyo Institute of Technology
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Minami Masaki
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Takeda Keigo
Department of Electric Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
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Matsumoto Ryosuke
Sony Shiroishi Semiconductor Inc., Shiroishi, Miyagi 980-8579, Japan
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Chen Shang
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Uesawa Fumikatsu
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Jia Fengdong
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Inui Hirotoshi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Kularatne Jagath
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Hayashi Toshio
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Inui Hirotoshi
Department of Electrical and Electronic Engineering, Graduate School of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Uesawa Fumikatsu
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Suu Koukou
Institute for Semiconductor and Electronics Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
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Kano Hiroyuki
NU Eco Engineering Co., Ltd., Miyoshi, Aichi 470-0201, Japan
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Kondo Hiroki
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Uesawa Fumikatsu
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Sumi Naoya
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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TATSUMI Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KANO Hiroyuki
NU Eco Engineering Co., Ltd.
著作論文
- Dissociation Channels of c-C4F8 to CF2 Radical in Reactive Plasma
- Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet
- Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
- In-situ Time-Resolved Infrared Spectroscopic Study of Silicon-Oxide Surface during Selective Etching over Silicon in Fluorocarbon Plasma