Takeda Keigo | Department of Electric Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan

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著作論文

Combinatorial Plasma Etching Process
Spatial distributions of electron, CF, and CF2 radical densities and gas temperature in DC-superposed dual-frequency capacitively coupled plasma etch reactor employing cyclic-C4F8/N2/Ar gas
Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet
Measurement of Hydrogen Radical Density and Its Impact on Reduction of Copper Oxide in Atmospheric-Pressure Remote Plasma Using H2 and Ar Mixture Gases
Surface Loss Probability of Nitrogen Atom on Stainless-Steel in N2 Plasma Afterglow
Dependence of Surface-Loss Probability of Hydrogen Atom on Pressures in Very High Frequency Parallel-Plate Capacitively Coupled Plasma
Effect of Low Level O2 Addition to N2 on Surface Cleaning by Nonequilibrium Atmospheric-Pressure Pulsed Remote Plasma
Inactivation of Penicillium digitatum Spores by a High-Density Ground-State Atomic Oxygen-Radical Source Employing an Atmospheric-Pressure Plasma
Nitriding of Polymer by Low Energy Nitrogen Neutral Beam Source
Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature
Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation
H2/N2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition
An Autonomously Controllable Plasma Etching System Based on Radical Monitoring
Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes
Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes (Special Issue : Dry Process)
A Novel Silicon-Dioxide Etching Process Employing Pulse-Modulated Electron-Beam-Excited Plasma

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