A Novel Silicon-Dioxide Etching Process Employing Pulse-Modulated Electron-Beam-Excited Plasma
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概要
- 論文の詳細を見る
We developed a novel silicon-dioxide (SiO2) etching process employing a pulse-modulated electron-beam-excited plasma (EBEP) and investigated its etching characteristics. The pulse-modulated EBEP was found to have an excellent potential for resolving problems such as the plasma-induced thermal damage on a photoresist film on a substrate and the nonuniformity of etching in a conventional EBEP. Furthermore, the anisotropic SiO2 etching at a high rate of 375 nm/min was successfully performed without any thermal damage to the photoresist film. The etching rate of the pulse-modulated EBEP was a few tens times higher than those of conventional etching processes without any additional bias power supply. As a result, the microfabrication on the end surface of the optical fiber was demonstrated.
- Japan Society of Applied Physicsの論文
- 2004-09-15
著者
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Tomekawa Yutaka
Faculty Of System Eng. Wakayama University
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Takeda Keigo
Department of Electric Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
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Ito Masafumi
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Ito Masafumi
Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
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YAMAKAWA Koji
Department of Applied Materials Science, Osaka Prefecture University
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Ohta Takayuki
Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
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Ohta Takayuki
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Iwasaki Masahiro
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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