Dependence of Surface-Loss Probability of Hydrogen Atom on Pressures in Very High Frequency Parallel-Plate Capacitively Coupled Plasma
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概要
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Relatively high-pressure (several hundred Pa) plasma was used for very high rate deposition of silicon thin films. We studied the loss kinetics of hydrogen atoms, which influence microcrystalline silicon film property in capacitively coupled plasma at relatively high-pressure using vacuum ultraviolet laser absorption spectroscopy. Increasing the pressures from 66.5 to 665 Pa, we found that the decay time constants of H atom were significantly lengthened from measurements of afterglow plasmas. In addition, surface-loss probabilities of the H atom decreased as the pressure increased.
- 2010-10-25
著者
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Sekine Makoto
Department Of Electrical Engineering And Computer Science Nagoya University
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Abe Yusuke
Department Of Electrical Engineering And Computer Science Nagoya University
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Takeda Keigo
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Takeda Keigo
Department of Electric Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Abe Yusuke
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Kawashima Sho
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Hori Masaru
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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ABE Yusuke
Department of Biomedical Engineering, Graduate School of Medicine, The University of Tokyo
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