Radical Behavior in Fluorocarbon Plasma and Control of Silicon Oxide Etching by Injection of Radicals
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概要
- 論文の詳細を見る
In SiO_2/Si selective etching processes using fluorocarbon plasmas, surface reactions of fluorocarbon radicals can affect the etching selectivity considerably. Therefore, information on radicals in plasmas and their surface reactions must be obtained. We developed an in-situ method of measuring various radicals in plasmas using infrared diode laser absorption spectroscopy (IRLAS) and have clarified the behaviors of the CF_x (x = 1-3) radicals in fluorocarbon plasmas for the first time. Moreover, we recently developed techniques of radical injection into plasma (RIT) and clarified the important radical in the plasma etching process. It is expected that these advances will contribute to the further developments in the semiconductor process field.
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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GOTO Toshio
Department of Quantum Engineering, Nagoya University
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Goto Toshio
Department Of Quantum Engineering Nagoya University
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Goto Toshio
Department Of Electronic Mechanical Engineering Nagoya University
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GOTO Toshio
Department of Agricultural Chemistry, Faculty of Agriculture, Nagoya University
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