High-Rate Growth of Films of Dense, Aligned Double-Walled Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition
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概要
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Carbon nanotube (CNT) films were grown using microwave plasma-enhanced chemical vapor deposition. Catalytic cobalt (Co) nanoparticles were deposited on a silicon substrate using pulsed arc deposition. A titanium nitride (TiN) thin film was used as a buffer layer on the substrate in order to prevent the formation of Co silicide. A dense, vertically aligned, double-walled CNT (DWNT) film was grown rapidly on the Co-catalyzed Si substrate. The CNTs grew at an extremely high rate of 600 nm/s during the first 10 min of growth. Dense DWNT films with thicknesses of over 500 μm were obtained in 20 min.
- 2005-05-10
著者
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Hiramatsu Mineo
Nano Factory Department Of Electrical And Electronic Engineering Meijo University
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NAGAO Hidetoshi
Nano Factory, Department of Materials Science and Engineering, Meijo University
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TANIGUCHI Masaki
Nano Factory, Department of Materials Science and Engineering, Meijo University
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AMANO Hiroshi
Nano Factory, Department of Materials Science and Engineering, Meijo University
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ANDO Yoshinori
Nano Factory, Department of Materials Science and Engineering, Meijo University
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Ando Yoshinori
Nano Factory, Department of Materials Science and Engineering, Meijo University, Tempaku, Nagoya 468-8502, Japan
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Hiramatsu Mineo
Nano Factory, Department of Electrical and Electronic Engineering, Meijo University, Tempaku, Nagoya 468-8502, Japan
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Amano Hiroshi
Nano Factory, Department of Materials Science and Engineering, Meijo University, Tempaku, Nagoya 468-8502, Japan
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Nagao Hidetoshi
Nano Factory, Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Nagao Hidetoshi
Nano Factory, Department of Materials Science and Engineering, Meijo University, Tempaku, Nagoya 468-8502, Japan
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