Novel Silicon Wafer Slicing Technology Using Atmospheric-Pressure Reactive Microplasma
スポンサーリンク
概要
- 論文の詳細を見る
Solar cells using the single or polycrystalline silicon as the substrate have the great advantage of a stable high electricity generation for a long lifetime. However, it is difficult to fabricate thin silicon wafers for the substrate of solar cells. In this study, a novel silicon wafer slicing technology have been developed using an atmospheric-pressure reactive microplasma with a SF6 gas. The characteristics of the microplasma for etching of the silicon substrate were investigated. A single crystalline silicon chip of 500 μm in thickness was successfully sliced with a kerf loss of 300 μm in 16 min. The slicing technology of the silicon wafer for next-generation solar cells has been demonstrated firstly employing the atmospheric-pressure reactive microplasma.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-07-25
著者
-
Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
-
Kano Hiroyuki
Nu-ecoengineering Co. Ltd.
-
Kondo Michio
Research Center For Photovoltaic Technologies Aist
-
Inui Hirotoshi
NanoFactory, Department of Materials Science and Engineering, Meijo University, Shiogamaguchi, Tempaku, Nagoya 468-8502, Japan
-
Ideno Takuya
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
-
Takashima Seigo
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
-
Hiramatsu Mineo
NanoFactory, Department of Materials Science and Engineering, Meijo University, Shiogamaguchi, Tempaku, Nagoya 468-8502, Japan
-
Takashima Seigo
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Kano Hiroyuki
NU-Eco Engineering Co., Ltd., Ooaza, Kurozasa Aza, Umazutsumi, Miyoshi, Aichi 470-0201, Japan
-
Hori Masaru
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
関連論文
- Diamond Film Formation by OH Radical Injection from Remote Microwave H_2/H_2O Plasma into Parallel-Plate RF Methanol Plasma
- High-Rate Anisotropic Ablation and Deposition of Polytetrafluoroethylene Using Synchrotron Radiation Process
- Synthesis of Diamond Using RF Magnetron Methanol Plasma Chemical Vapor Deposition Assisted by Hydrogen Radical Injection
- Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH_4 Plasmas
- Development of Compact C_2F_4 Gas Supply Equipment and Its Application to Etching of Dielectrics in an Environmental Benign Process
- Octave Spanning High Quality Super Continuum Generation Using 10nJ and 104fs High Energy Ultrashort Soliton Pulse
- Combinatorial Plasma Etching Process
- Synthesis of Platinum Nanoparticles on Two-Dimensional Carbon Nanostructures with an Ultrahigh Aspect Ratio Employing Supercritical Fluid Chemical Vapor Deposition Process
- Control of Electric Conduction of Carbon Nanowalls
- Electrical Characterization of Carbon Nanowalls
- Reduction of Optical Loss in Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells by High-Mobility Hydrogen-Doped In_2O_3 Transparent Conductive Oxide
- Inverted Aluminum-Induced Layer Exchange Method for Thin Film Polycrystalline Silicon Solar Cells on Insulating Substrates
- High Performance of Silicon Oxide Selective Etching Using F_2 Gas and Graphite Instead of Perfluorinated Compound Gases
- Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma
- Behaviors of carbon atom density in hydrocarbon and fluorocarbon plasmas
- Measurement of Einstein's A Coefficient of the 296.7 nm Transition Line of the Carbon Atom
- Measurement of Carbon Atom Density in High Density Plasma Process
- Effects of Oxygen and Nitrogen Atoms on SiOCH Film Etching in Ultrahigh-Frequency Plasma
- Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N_2 and H_2 Gas Chemistry
- Synthesis of Polytetrafluoroethylene-like Films by a Novel Plasma Enhanced Chemical Vapor Deposition Employing Solid Material Evaporation Technique
- CH_3 Radical Density in Electron Cyclotron Resonance CH_3OH and CH_3OH/H_2 Plasmas
- Evaluation of CF_2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO_2 Etching Process Using Radical Injection Technique
- CF_X (X=1-3) Radical Measurements in ECR Etching Plasma Employing C_4F_8 Gas by Infrared Diode Laser Absorption Spectroscopy
- Characteristics of Fluorocarbon Radicals and CHF_3 Molecule in CHF_3 Electron Cyclotron Resonance Downstream Plasma
- CF_X(X=1-3) Radicals Controlled by On-Off Modulated Electron Cyclotron Resonance Plasma and Their Effects on Polymer Film Deposition ( Plasma Processing)
- Cleaning of Glass Disk in Oxygen Plasma by Using Compact Electron-Beam-Excited Plasma Source
- Spatial distributions of electron, CF, and CF2 radical densities and gas temperature in DC-superposed dual-frequency capacitively coupled plasma etch reactor employing cyclic-C4F8/N2/Ar gas
- Microcrystalline Si_Ge_x Solar Cells Exhibiting Enhanced Infrared Response with Reduced Absorber Thickness
- Atmospheric Pressure Fluorocarbon-Particle Plasma Chemical Vapor Deposition for Hydrophobic Film Coating
- Measurement of Spatial Distribution of SiF_4 and SiF_2 Densities in High Density SiF_4 Plasma Using Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
- Spatial Distribution Measurement of Absolute Densities of CF and CF_2 Radicals in a High Density Plasma Reactor Using a Combination of Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
- Device-Grade Amorphous Silicon Prepared by High-Pressure Plasma
- Critical Factors for Nucleation and Vertical Growth of Two Dimensional Nano-Graphene Sheets Employing a Novel Ar^+ Beam with Hydrogen and Fluorocarbon Radical Injection
- Effects of Dilution Gases on Si Atoms and SiHx^^+ (X = 0-3) Ions in Electron Cyclotron Resonance SiH_4 Plasmas
- Measurements of the CF, CF_2 and CF_3 Radicals in a CHF_3 Electron Cyclotron Resonance Plasma
- Deposition of Diamond-Like Carbon Using Compact Electron-Beam-Excited Plasma Source
- Investigation of Nitrogen Atoms in Low-Pressure Nitrogen Plasmas Using a Compact Electron-Beam-Excited Plasma Source
- Thin Film Solar Cells Prepared on Low Thermal Budget Polycrystalline Silicon Seed Layers
- Measurement of Hydrogen Radical Density and Its Impact on Reduction of Copper Oxide in Atmospheric-Pressure Remote Plasma Using H2 and Ar Mixture Gases
- Surface Loss Probability of Nitrogen Atom on Stainless-Steel in N2 Plasma Afterglow
- Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF4 Plasmas
- Crystalline Si Heterojunction Solar Cells with the Double Heterostructure of Hydrogenated Amorphous Silicon Oxide
- Improvement of the Production Yield of Spherical Si by Optimization of the Seeding Technique in the Dropping Method
- Control of Fluorocarbon Radicals by On-Off Modulated Electron Cyclotron Resonance Plasma
- Transient Phenomena in Plasma-Enhanced Chemical Vapor Deposition Processes of Thin-Film Silicon
- Evaluation of Property Changes due to Radiation, Radicals, and Ions on Organic Low-$k$ Films in H2/N2 Plasma Etching
- Development of Compact C2F4 Gas Supply Equipment and Its Application to Etching of Dielectrics in an Environmental Benign Process
- Synthesis of Fluorinated SiN_x Gate Dielectric Films Using ECR-PECVD Employing SiF_4/N_2/H_2 Gases
- Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by Plasma Enhanced Chemical Vapor Deposition Employing NH_3 and SiF_4
- Control of Ion Bombardment and Species for Ultra Low Temperature Formation of Silicon Nitride Gate Dielectric Films Using Plasma Chemical Vapor Deposition
- Contrast Enhancement of Wavelength-Selective Detection of Mid-Infrared Using Localized Atmospheric-Pressure Plasma Treatment
- Study of Spatial Distribution of SiH3 Radicals in Very High Frequency Plasma Using Cavity Ringdown Spectroscopy
- Novel atmospheric pressure inductively coupled micro plasma source using floating wire electrode (Special issue: Plasma processing)
- Dependence of Surface-Loss Probability of Hydrogen Atom on Pressures in Very High Frequency Parallel-Plate Capacitively Coupled Plasma
- Effect of Low Level O2 Addition to N2 on Surface Cleaning by Nonequilibrium Atmospheric-Pressure Pulsed Remote Plasma
- Formation of SiH3 Radicals and Nanoparticles in SiH4–H2 Plasmas Observed by Time-Resolved Cavity Ringdown Spectroscopy
- Floating Wire for Enhancing Ignition of Atmospheric Pressure Inductively Coupled Microplasma (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Temperature and Density of CF Radicals in 60 MHz Capacitively Coupled Fluorocarbon Gas Plasma
- Radical Behavior in Fluorocarbon Plasma and Control of Silicon Oxide Etching by Injection of Radicals
- Aligned Growth of Single-Walled and Double-Walled Carbon Nanotube Films by Control of Catalyst Preparation
- High-Rate Growth of Films of Dense, Aligned Double-Walled Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Dense Carbon Nanotube Films Using Microwave Plasma-Enhanced Chemical Vapor Deposition
- Light Trapping by Ag Nanoparticles Chemically Assembled inside Thin-Film Hydrogenated Microcrystalline Si Solar Cells
- Control of Super Hydrophobic and Super Hydrophilic Surfaces of Carbon Nanowalls Using Atmospheric Pressure Plasma Treatments (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Silicon Oxide Selective Etching Employing Dual Frequency Superimposed Magnetron Sputtering of Carbon Using F2/Ar Gases
- Inactivation of Penicillium digitatum Spores by a High-Density Ground-State Atomic Oxygen-Radical Source Employing an Atmospheric-Pressure Plasma
- Amorphous-Silicon-Based Thin-Film Solar Cells Exhibiting Low Light-Induced Degradation (Special Issue : Photovoltaic Science and Engineering)
- Nitriding of Polymer by Low Energy Nitrogen Neutral Beam Source
- Ultrahigh-Speed Synthesis of Nanographene Using Alcohol In-Liquid Plasma
- Fabrication of Multilayered SiOCH Films with Low Dielectric Constant Employing Layer-by-Layer Process of Plasma Enhanced Chemical Vapor Deposition and Oxidation
- Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature
- Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation
- Nucleation Control of Carbon Nanowalls Using Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Graphene-Based Films Using Microwave-Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Carbon Nanowalls on Carbon Fiber Paper for Fuel Cell Application
- High-Performance Decomposition and Fixation of Dry Etching Exhaust Perfluoro-Compound Gases and Study of Their Mechanism
- Multiple-Height Microstructure Fabricated by Deep Reactive Ion Etching and Selective Ashing of Resist Layer Combined with Ultraviolet Curing
- H2/N2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition
- An Autonomously Controllable Plasma Etching System Based on Radical Monitoring
- Surface Modification Process of Contact Lens Using Three-Phase AC Excited Nonequilibrium Atmospheric Pressure Ar Plasma
- Novel Silicon Wafer Slicing Technology Using Atmospheric-Pressure Reactive Microplasma
- Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
- Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma
- Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes
- Inactivation Process of Penicillium digitatum Spores Treated with Non-equilibrium Atmospheric Pressure Plasma
- Supercritical Fluid Deposition of High-Density Nanoparticles of Photocatalytic TiO
- Roles of SiH3 and SiH2 Radicals in Particle Growth in rf Silane Plasmas
- Optical-Fiber-Type Broadband Cavity Ring-Down Spectroscopy Using Wavelength-Tunable Ultrashort Pulsed Light
- Development and Characterization of a New Compact Microwave Radical Beam Source
- Fabrication of Carbon Nanowalls Using Novel Plasma Processing
- Study on the Absolute Density and Translational Temperature of Si Atoms in Very High Frequency Capacitively Coupled SiH4 Plasma with Ar, N2, and H2 Dilution Gases
- Synthesis of Polytetrafluoroethylene-like Films by a Novel Plasma Enhanced Chemical Vapor Deposition Employing Solid Material Evaporation Technique
- Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N2 and H2 Gas Chemistry
- Effects of Oxygen and Nitrogen Atoms on SiOCH Film Etching in Ultrahigh-Frequency Plasma
- Amorphous Silicon and Tungsten Etching Employing Environmentally Benign Plasma Process
- Low-$k$ SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma
- Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes (Special Issue : Dry Process)
- A Novel Silicon-Dioxide Etching Process Employing Pulse-Modulated Electron-Beam-Excited Plasma
- Optical-Fiber-Type Broadband Cavity Ring-Down Spectroscopy Using Wavelength-Tunable Ultrashort Pulsed Light
- Supercritical Fluid Deposition of High-Density Nanoparticles of Photocatalytic TiO_2 on Carbon Nanowalls