Crystalline Si Heterojunction Solar Cells with the Double Heterostructure of Hydrogenated Amorphous Silicon Oxide
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概要
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Hydrogenated amorphous silicon oxide (a-SiO:H) layers have been applied to fabricate crystalline silicon (c-Si) heterojunction solar cells. The a-SiO:H/c-Si double heterostructure (DH) solar cell shows a notable increase in short-circuit current, compared with the single heterostructure solar cell, owing to suppression of carrier recombination at the solar-cell back surface. Nevertheless, the characteristics of the DH solar cells are found to deteriorate sharply with decreasing c-Si substrate thickness, and the solar cell efficiency decreases from 17.5% (300 μm) to 12.1% (54 μm). In this article, the effect of c-Si substrate thickness on the performance of DH solar cells is discussed.
- 2009-06-25
著者
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Fujiwara Hiroyuki
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology (
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Kondo Michio
Research Center For Photovoltaic Technologies Aist
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Sai Hitoshi
Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Fujiwara Hiroyuki
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
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Kondo Michio
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
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