Device-Grade Amorphous Silicon Prepared by High-Pressure Plasma

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-15

著者

• ISOMURA Masao

  New Materials Research Center, Sanyo Electric Co., Ltd.

• Kondo Masafumi

  Central Research Laboratories Charp Corporation

• Isomura Masao

  New Materials Research Center Sanyo Electric Co . Ltd.

• KONDO Michio

  Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology

• Kondo Masaki

  Optical-device Laboratories Sharp Corporation

• Isomura M

  New Materials Research Center Sanyo Electric Co. Ltd.

• Matsuda A

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University

• Kondo M

  Research Initiative For Thin Film Silicon Solar Cells National Institute Of Advanced Industrial Scie

• Kondo M

  National Inst. Advanced Ind. Sci. And Technol. (aist) Ibaraki Jpn

• Kondo Michio

  Research Center For Photovoltaics (rcpvs) National Institute Of Advanced Industrial Science And Tech

• MATSUDA Akihisa

  Research Initiative for Thin Film Silicon Solar Cells, National Institute of Advanced Industrial Sci

• Kondo Michio

  Research Center For Photovoltaic Technologies Aist

関連論文

• Effect of Composition on the Properties of Amorphous Silicon Carbide at a Certain Optical Gap
• Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
• Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase : Surfaces, Interfaces and Films
• The Orthorhombic-to-Tetragonal Phase Transition in Sputtered Gd-Ba-Cu-O Thin Films by Low Temperature Processing : Electrical Properties of Condensed Matter
• Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
• LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
• Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
• Effect of the i-Layer Optical Gap on the Light-Induced Degradation of a-SiGe Solar Cells
• Investigation of Hydrogenated Amorphous Silicon Germanium Fabricated under High Hydrogen Dilution and Low Deposition Temperature Conditions for Stable Solar Cells
• Influence of Oxygen and Nitrogen in the Intrinsic Layer of a-Si:H Solar Cells
• Reactive Ion Etching of Al Alloy Films in a Rotating Magnetic Field
• Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
• Reduction of Optical Loss in Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells by High-Mobility Hydrogen-Doped In_2O_3 Transparent Conductive Oxide
• Inverted Aluminum-Induced Layer Exchange Method for Thin Film Polycrystalline Silicon Solar Cells on Insulating Substrates
• Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
• Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
• Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
• The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
• High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates : Waves, Optics and Quantum Electronics
• Enhancement of the Capture Rate of Carriers in (111)-Oriented GaAs/AlGaAs Quantum Well Structures : Electrical Properties of Condensed Matter
• Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells : Surfaces, Interfaces and Films
• Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
• Dependence of Open Circuit Voltage of Amorphous Silicon Solar Cells on Thickness and Doping Level of the p-Layer
• Temperature Dependence of Piezoelectric Constant of 0.5PbNi_Nb_O_3-0.5Pb(Zr, Ti)O_3 Ceramics in the Vicinity of Morphotropie Phase Boundary
• Piezoelectric Properties of PbNi_Nb_O_3-PbTiO_3-PbZrO_3 Ceramics
• Spatial Distribution of SiH_3 Radicals in RF Silane Plasma
• SiH_3 Radical Density in Pulsed Silane Plasma
• Microcrystalline Si_Ge_x Solar Cells Exhibiting Enhanced Infrared Response with Reduced Absorber Thickness
• High-Power 780 nm AlGaAs Narrow-Stripe Window Structure Lasers with Window Grown on Facets
• Highly Reliable 150 mW CW Operation of Single-Stripe AlGaAs Lasers with Window Grown on Facets
• Stability of Two-Step-Growth Bi_2Sr_2CuO_x Films on Si(001) using SrO Buffer Layer(Superconductors)
• In-situ Annealing of Thin SrO Films Grown on Si(001)-2 × 1 by Molecular Beam Epitaxy
• Irradiation-Temperature Dependence of the Light-Induced Effect in a-Si Solar Cells
• Preparation and Properties of a-SiGe:H Films Fabricated with a Super Chamber (Separated Ultra-High Vacuum Reaction Chamber)
• Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber
• A New Analytical Method of Amorphous Silicon Solar Cells
• Light-Induced Effect of a-Si Films Fabricated Using the Super Chamber
• Device-Grade Amorphous Silicon Prepared by High-Pressure Plasma
• Effects of Hydrogen Diluted silane plasma on Amorphous Silicon Solar Cells
• Enhancement of Open Circuit Voltage via Light soaking in Amorphous Silicon Solar Cells
• Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon
• Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
• Deviation Characteristics of Elliptical Laser Gaussian Beamson Optical Head
• Electroreflectance and Photoluminescence Studies of In_Ga_xP_As_y Lattice-Matched to GaAs
• A Study on LPE Growth of IN_Ga_xPAs_y(y≃0) on (100) GaAs Substrate
• Thin Film Solar Cells Prepared on Low Thermal Budget Polycrystalline Silicon Seed Layers
• Crystalline Si Heterojunction Solar Cells with the Double Heterostructure of Hydrogenated Amorphous Silicon Oxide
• Improvement of the Production Yield of Spherical Si by Optimization of the Seeding Technique in the Dropping Method
• Transient Phenomena in Plasma-Enhanced Chemical Vapor Deposition Processes of Thin-Film Silicon
• Study of Spatial Distribution of SiH3 Radicals in Very High Frequency Plasma Using Cavity Ringdown Spectroscopy
• Glow-Discharge Deposition of Amorphous Silicon from SiH_3F
• Influence of Power-Source Frequency on the Properties of GD a-Si:H
• Glow-Discharge Deposition of a-Si: H from Pure Si_2H_6 and Pure SiH_4
• Formation of SiH3 Radicals and Nanoparticles in SiH4–H2 Plasmas Observed by Time-Resolved Cavity Ringdown Spectroscopy
• Light Trapping by Ag Nanoparticles Chemically Assembled inside Thin-Film Hydrogenated Microcrystalline Si Solar Cells
• Amorphous-Silicon-Based Thin-Film Solar Cells Exhibiting Low Light-Induced Degradation (Special Issue : Photovoltaic Science and Engineering)
• Compensation of Native Defect Acceptors in Microcrystalline Ge and SixGe[x] Thin Films by Oxygen Incorporation : Electrical Properties and Solar Cell Performance
• Laser Original : Silicon Nanocrystals Surface Engineering by Nanosecond Laser Processing in Water (「液中レーザープロセッシングの最前線」特集号)
• Hierarchically Organized Micro/Nano-Structures of TiO2
• Novel Silicon Wafer Slicing Technology Using Atmospheric-Pressure Reactive Microplasma
• Considering the Dependence of the Light-Induced Effect on Carbon Content in Boron-Doped Amorphous Silicon-Carbon
• In situ Photocurrent Measurements of Thin-Film Semiconductors during Plasma-Enhanced Chemical Vapor Deposition
• Hydrogen-doped In2O3 as High-mobility Transparent Conductive Oxide

もっと見る 閉じる

スポンサーリンク