In situ Photocurrent Measurements of Thin-Film Semiconductors during Plasma-Enhanced Chemical Vapor Deposition
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概要
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Time evolutions of photocurrents in hydrogenated amorphous silicon films under plasma-enhanced chemical vapor deposition have been measured. The photocurrent is gradually increased with growth time, and the corresponding photoconductivity is improved. The improvement is dependent on the temperature, and more pronounced during postgrowth annealing. The postgrowth annealing plays an important role in improving the transport of photoexcited carriers.
- 2013-12-25
著者
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Kondo Michio
Research Center For Photovoltaic Technologies Aist
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Nunomura Shota
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Sakata Isao
Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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