Study of Spatial Distribution of SiH3 Radicals in Very High Frequency Plasma Using Cavity Ringdown Spectroscopy
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概要
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Time-resolved cavity ringdown ($\tau$-CRD) spectroscopy has been applied to measure the SiH3 radical density profile between the electrodes in a pulsed SiH4/H2 very high frequency (VHF) plasma under μc-Si:H deposition conditions. On time scales smaller than ${\sim}1$ s, cavity loss reflects the light absorption by SiH3 radicals, whereas on time scales larger than ${\sim}1$ s, an additional cavity loss due to light scattering at Si clusters and dust particles, generated in the pulsed SiH4/H2 VHF plasma, is observed. From the measurements of the spatial distribution of SiH3 radicals between electrodes, the incident SiH3 radical flux to the electrode surface is determined, which reveals a significant contribution of SiH3 radicals to μc-Si:H thin film growth.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-30
著者
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Kondo Michio
Research Center For Photovoltaics (rcpvs) National Institute Of Advanced Industrial Science And Tech
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Kondo Michio
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology (
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Nagai Takehiko
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology
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Smets Arno
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology
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Smets Arno
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology (
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Nagai Takehiko
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology (
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Kondo Michio
Research Center For Photovoltaic Technologies Aist
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